Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2355834 ◽

2014 ◽

Vol 61 (11) ◽

pp. 3808-3813 ◽

Author(s):

Qimeng Jiang ◽

Zhikai Tang ◽

Chunhua Zhou ◽

Shu Yang ◽

Kevin J. Chen

Keyword(s):

Smart Power ◽

Power Ic ◽

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Smart power IC simulation of substrate coupled current due to majority and minority carriers transports

2010 IEEE International Conference on Integrated Circuit Design and Technology ◽

10.1109/icicdt.2010.5510262 ◽

2010 ◽

Author(s):

Fabrizio Lo Conte ◽

Jean-Michel Sallese ◽

Maher Kayal

Keyword(s):

Smart Power ◽

Power Ic ◽

Minority Carriers

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1.2-μM non-epi CMOS smart power IC with four H-bridge motor drivers for portable applications

1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96 ◽

10.1109/iscas.1996.540027 ◽

2002 ◽

Author(s):

Boeun Kim ◽

Cheolwoo Kim ◽

Sangchan Han ◽

Soowon Kim ◽

Hoonsoo Park ◽

...

Keyword(s):

Smart Power ◽

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Power Semiconductor Devices and Smart Power IC Technologies CFP

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2598234 ◽

2016 ◽

Vol 63 (9) ◽

pp. 3813-3813

Keyword(s):

Semiconductor Devices ◽

Smart Power ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

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A Lateral Trench Electrode Power MOSFET with Superior Electrical Characteristics for Smart Power IC Systems

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2004.17.1.027 ◽

2004 ◽

Vol 17 (1) ◽

pp. 27-30 ◽

Keyword(s):

Electrical Characteristics ◽

Smart Power ◽

Power Mosfet ◽

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Fast switching power semiconductor devices and Smart Power IC´s: An enabling technology for future high efficient electronic system

Proceedings of 2010 International Symposium on VLSI Technology, System and Application ◽

10.1109/vtsa.2010.5488902 ◽

2010 ◽

Author(s):

Leo Lorenz

Keyword(s):

Semiconductor Devices ◽

Electronic System ◽

Enabling Technology ◽

Smart Power ◽

Power Semiconductor ◽

Switching Power ◽

Fast Switching ◽

Power Semiconductor Devices ◽

High Efficient ◽

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Power Semiconductor Devices and Smart Power IC Technologies CFP

IEEE Electron Device Letters ◽

10.1109/led.2016.2599410 ◽

2016 ◽

Vol 37 (9) ◽

pp. 1253-1253

Keyword(s):

Semiconductor Devices ◽

Smart Power ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

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Combined Smart Power IC for VCR with PWM Controlled Motor Voltage

IEEE International Conference on Consumer Electronics ◽

10.1109/icce.1994.582166 ◽

1994 ◽

Author(s):

G. Gleim ◽

L. Bertolini ◽

F. Heizmann

Keyword(s):

Smart Power ◽

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Power Semiconductor Devices and Smart Power IC Technologies CFP

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2546844 ◽

2016 ◽

Vol 63 (5) ◽

pp. 2227-2227

Keyword(s):

Semiconductor Devices ◽

Smart Power ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

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Electrical characteristics of a new lateral trench electrode IGBT for smart power IC

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) ◽

10.1109/icsict.2001.981439 ◽

2002 ◽

Author(s):

Ey Goo Kang ◽

Seung Hyun Moon ◽

Man Young Sung

Keyword(s):

Electrical Characteristics ◽

Smart Power ◽

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Smart power IC design methodology based on a new figure of merit (FOM) for standard CMOS technology

9th International Seminar on Power Semiconductors (ISPS 2008) ◽

10.1049/ic:20080211 ◽

2008 ◽

Author(s):

A. Yoo ◽

M. Chang ◽

O. Trescases ◽

Wai Tung Ng

Keyword(s):

Design Methodology ◽

Figure Of Merit ◽

Cmos Technology ◽

Ic Design ◽

Smart Power ◽

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