Charge-Based Compact Model of Gate Leakage Current for AlInN/GaN and AlGaN/GaN HEMTs

2020 ◽  
Vol 67 (3) ◽  
pp. 834-840 ◽  
Author(s):  
Ankur Debnath ◽  
Nandita DasGupta ◽  
Amitava DasGupta
Keyword(s):  
Leakage Current ◽  
Compact Model ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

2018 ◽  
Vol 27 (9) ◽  
pp. 097309 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Yang Xiao ◽  
Xiao-Hua Ma ◽  
Yi-Chuan Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer

2019 ◽  
Vol 114 (1) ◽  
pp. 013503 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Xiao-Hua Ma ◽  
Bin Hou ◽  
Guo-Guo Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTs

2015 ◽  
Vol 36 (12) ◽  
pp. 1281-1283 ◽  
Author(s):  
Dawei Yan ◽  
Jian Ren ◽  
Guofeng Yang ◽  
Shaoqing Xiao ◽  
Xiaofeng Gu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts ◽  
Lattice Matched

On gate leakage current partition for MOSFET compact model

2006 ◽  
Vol 50 (11-12) ◽  
pp. 1740-1743 ◽  
Author(s):  
Jayson Hu ◽  
Xuemei Xi ◽  
Ali Niknejad ◽  
Chenming Hu
Keyword(s):  
Leakage Current ◽  
Compact Model ◽  
Gate Leakage Current ◽  
Gate Leakage

A compact model of the reverse gate-leakage current in GaN-based HEMTs

2016 ◽  
Vol 126 ◽  
pp. 10-13 ◽  
Author(s):  
Xiaoyu Ma ◽  
Junkai Huang ◽  
Jielin Fang ◽  
Wanling Deng
Keyword(s):  
Leakage Current ◽  
Compact Model ◽  
Gate Leakage Current ◽  
Gate Leakage

scholarly journals Design of Hybrid Schottky-Ohmic Gate in Normally-Off p-GaN Gate AlGaN/GaN HEMTs

2021 ◽  
Author(s):  
Wen-Shiuan Tsai ◽  
Zhen-Wei Qin ◽  
Yue-ming Hsin
Keyword(s):  
Leakage Current ◽  
Drain Current ◽  
Contact Length ◽  
Optimal Performance ◽  
Hole Injection ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gate Structure ◽  
Left And Right ◽  
Gan Hemts

Abstract This study proposes three hybrid Schottky-ohmic gate structures for normally-off p-GaN gate AlGaN/GaN HEMTs. One has a Schottky-gate cover on the ohmic-gate and has part of the area contact to the p-GaN surface at the left and right sides of ohmic-gate (Structure A). The two others only have the Schottky-gate contact to the p-GaN surface at the left side (Structure B) or right side (Structure C) of the ohmic-gate. Different gate metal designs change the hole injection from p-GaN to GaN channel and show various gate leakages. The optimized contact length of Schottky-gate can suppress on-state gate leakage current over two orders of magnitude compared to conventional ohmic p-GaN gate HEMT. The improved on-state maximum drain current is over 60 mA/mm compared to Schottky p-GaN gate HEMT. Optimal performance in Structure B with Schottky-gate contact length ranges from 0.8 to 1.8 μm in a 2 μm gate geometry.

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