Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm²
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2021 ◽
Vol 36
(2)
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pp. 1269-1273
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2018 ◽
Vol 39
(7)
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pp. 1034-1037
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2020 ◽
Vol 41
(1)
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pp. 99-102
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2016 ◽
Vol 136
(4)
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pp. 479-483