Digitally Controlled Gate Current Source-Based Active Gate Driver for Silicon Carbide MOSFETs

2020 ◽  
Vol 67 (12) ◽  
pp. 10121-10133
Author(s):  
Yash Sukhatme ◽  
Vamshi Krishna Miryala ◽  
P. Ganesan ◽  
Kamalesh Hatua
Keyword(s):  
Silicon Carbide ◽  
Current Source ◽  
Gate Current ◽  
Digitally Controlled ◽  
Gate Driver

scholarly journals A Novel Current-Source-Based Gate Driver with Active Voltage Balancing Control for Series-Connected GaN HEMTs

2021 ◽  
pp. 1-1
Author(s):  
Zhengda Zhang ◽  
Chunhui Liu ◽  
Mengzhi Wang ◽  
Yunpeng Si ◽  
Yifu Liu ◽  
...  
Keyword(s):  
Current Source ◽  
Voltage Balancing ◽  
Gate Driver ◽  
Gan Hemts ◽  
Balancing Control

scholarly journals Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch

2021 ◽  
Vol 12 (3) ◽  
pp. 1293
Author(s):  
Martin J. Carra ◽  
Hernan Tacc ◽  
Jose Lipovetzky
Keyword(s):  
Silicon Carbide ◽  
Performance Evaluation ◽  
Gallium Nitride ◽  
Switching Process ◽  
Control Power ◽  
Power Switch ◽  
Power Switches ◽  
Gate Driver ◽  
Output Losses

<p>Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.</p>

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