Superconducting properties and structure of Nb<inf>3</inf>Ge samples prepared by high pressure D.C. sputtering and by solid state diffusion

1979 ◽  
Vol 15 (1) ◽  
pp. 498-501 ◽  
Author(s):  
B. Letellier ◽  
J. Renard
1976 ◽  
Vol 28 (12) ◽  
pp. 738-740 ◽  
Author(s):  
O. Horigami ◽  
Thomas Luhman ◽  
C. S. Pande ◽  
M. Suenaga

2002 ◽  
Vol 17 (1) ◽  
pp. 52-59 ◽  
Author(s):  
N.F. Gao ◽  
Y. Miyamoto

The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.


2016 ◽  
Vol 686 ◽  
pp. 794-802 ◽  
Author(s):  
Yuan Yuan ◽  
Dajian Li ◽  
Yuanyuan Guan ◽  
Hans J. Seifert ◽  
Nele Moelans

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