Magnetooptic Spatial Light Modulator With One-Step Pattern Growth on Ion-Milled Substrates by Liquid-Phase Epitaxy

2004 ◽  
Vol 40 (4) ◽  
pp. 3045-3047 ◽  
Author(s):  
J.-H. Park ◽  
H. Takagi ◽  
J.-K. Cho ◽  
K. Nishimura ◽  
H. Uchida ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Spatial Light Modulator ◽  
Light Modulator ◽  
Pattern Growth ◽  
One Step

One-step multichannel pattern recognition based on the pixelated structure of a spatial light modulator

1998 ◽  
Vol 37 (11) ◽  
pp. 2063 ◽  
Author(s):  
A. Vargas ◽  
J. Campos ◽  
M. J. Yzuel ◽  
C. Iemmi ◽  
S. Ledesma
Keyword(s):  
Pattern Recognition ◽  
Spatial Light Modulator ◽  
Light Modulator ◽  
One Step

Selective Area Growth of Magnetic Garnet Crystals by Liquid-Phase Epitaxy

1999 ◽  
Vol 587 ◽  
Author(s):  
H. Yokoi ◽  
T. Mizumoto
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Energy ◽  
Selective Area Growth ◽  
X Ray ◽  
Selective Area ◽  
Light Waves ◽  
Area Growth ◽  
One Step ◽  
Magnetic Garnet

AbstractSelective area growth of magnetic garnet crystals was studied by liquid-phase epitaxy. The garnet layers grown on Ti-masked substrates were analyzed under a scanning electron microscope, and by X-ray diffraction measurements, energy-dispersive X-ray analysis and reflection high-energy electron diffraction. Narrow stripes in the Ti mask were designed to form waveguides by one-step growth. The light waves could be guided within the waveguide fabricated by selective area liquid-phase epitaxy.

Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

Rare Metals ◽  
2009 ◽  
Vol 28 (4) ◽  
pp. 313-316 ◽  
Author(s):  
Yuzhu Gao ◽  
Xiuying Gong ◽  
Weizheng Fang ◽  
Ishida Akihiro
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Cutoff Wavelength ◽  
One Step

Magneto-optic spatial light modulator with one-step pattern formation

2004 ◽  
Author(s):  
Jae-Hyuk Park ◽  
Jae-Kyeong Cho ◽  
Kazuhiro Nishimura ◽  
Hironaga Uchida ◽  
Mitsuteru Inoue
Keyword(s):  
Pattern Formation ◽  
Spatial Light Modulator ◽  
Light Modulator ◽  
One Step ◽  
Magneto Optic

Peelable GaAs mircotips grown by one-step selective liquid phase epitaxy

2011 ◽  
Author(s):  
Guangwei Qu ◽  
Lizhong Hu ◽  
Xiuping Liang ◽  
Heqiu Zhang ◽  
Yu Zhao
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
One Step

Terraced substrate inner stripe semiconductor lasers by one‐step liquid‐phase epitaxy

1989 ◽  
Vol 66 (5) ◽  
pp. 2225-2227 ◽  
Author(s):  
Guotong Du ◽  
Xiaoyu Ma ◽  
Zheng Zou ◽  
Xiaobo Zhang ◽  
Dingsan Gao
Keyword(s):  
Liquid Phase ◽  
Semiconductor Lasers ◽  
Liquid Phase Epitaxy ◽  
One Step

Liquid Phase Epitaxy of Si1−xGex(O<×≲1) On Partially Masked Si-Substrates

1987 ◽  
Vol 91 ◽  
Author(s):  
H.-P. Trah ◽  
M.I. Alonso ◽  
M. Konuma ◽  
E. Bauser ◽  
H. Cerva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Seeded Growth ◽  
X Ray ◽  
Si Substrates ◽  
Lateral Overgrowth ◽  
Linear Dimensions ◽  
Transmission Electron ◽  
One Step

ABSTRACTSingle-crystal Si1−x Gex(O<×≲1) layers are grown by seeded growth on partially SiO2-masked Si-substrates, using a one-step liquid phase epitaxy (LPE) process. The seed regions are stripe- and hole-shaped windows in the oxide, having linear dimensions between 1.5 and 100 μm. The windows extend in different orientation on (111) and (100) orientated substrates. Lateral overgrowth over the oxide-masked areas is achieved up to 70 μm in <110>-directions. X-ray diffraction and Raman scattering show that the epitaxial islands are homogeneous and of excellent crystal quality. In the regions of lateral overgrowth the dislocation density is reduced considerably as shown by defect-etching and cross section transmission electron microscopy.

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