InGaAsP InP current confinement mesa substrate buried heterostructure laser diode fabricated by one-step liquid-phase epitaxy

Journal of Lightwave Technology ◽

10.1109/jlt.1984.1073634 ◽

1984 ◽

Vol 2 (4) ◽

pp. 496-503 ◽

Author(s):

M. Sugimoto ◽

A. Suzuki ◽

H. Nomura ◽

R. Lang

Keyword(s):

Liquid Phase ◽

Laser Diode ◽

Liquid Phase Epitaxy ◽

Heterostructure Laser ◽

Current Confinement ◽

Buried Heterostructure ◽

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A new lateral selective‐area growth by liquid‐phase epitaxy: The formation of a lateral double‐barrier buried‐heterostructure laser

Applied Physics Letters ◽

10.1063/1.92960 ◽

1982 ◽

Vol 40 (11) ◽

pp. 942-944 ◽

Author(s):

W. T. Tsang ◽

R. A. Logan ◽

J. P. van der Ziel

Keyword(s):

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Selective Area Growth ◽

Double Barrier ◽

Selective Area ◽

Heterostructure Laser ◽

Area Growth ◽

Buried Heterostructure

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High-power high-temperature operation laser diode with InGaAsP/InP buried heterostructure fabricated by single-step liquid-phase epitaxy

10.1364/ofc.1982.thbb2 ◽

1982 ◽

Author(s):

H. Nomura ◽

M. Sugimoto ◽

A. Suzuki

Keyword(s):

High Temperature ◽

Liquid Phase ◽

Laser Diode ◽

Liquid Phase Epitaxy ◽

Single Step ◽

Buried Heterostructure ◽

High Temperature Operation

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InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement

Journal of Lightwave Technology ◽

10.1109/jlt.1983.1072079 ◽

1983 ◽

Vol 1 (1) ◽

pp. 195-202 ◽

Author(s):

I. Mito ◽

M. Kitamura ◽

Kenichi Kobayashi ◽

S. Murata ◽

M. Seki ◽

...

Keyword(s):

Laser Diode ◽

Effective Current ◽

Heterostructure Laser ◽

Current Confinement ◽

Buried Heterostructure ◽

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High-efficiency high-power InGaAsP planar buried-heterostructure laser diode with effective current confinement

10.1364/ofc.1982.thbb3 ◽

1982 ◽

Author(s):

Ikuo Mito ◽

Mitsuhiro Kitamura ◽

Kenichi Kobayashi ◽

Kohroh Kobayashi

Keyword(s):

Laser Diode ◽

High Efficiency ◽

Effective Current ◽

Heterostructure Laser ◽

Current Confinement ◽

Buried Heterostructure

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1.3μm InGaAsP/InP Crescent buried heterostructure laser diodes grown by liquid phase epitaxy

Journal of the Chinese Institute of Engineers ◽

10.1080/02533839.1988.9677086 ◽

1988 ◽

Vol 11 (4) ◽

pp. 399-405

Author(s):

Yan‐Kuin Su ◽

Tong‐Li Chen

Keyword(s):

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Laser Diodes ◽

Heterostructure Laser ◽

Buried Heterostructure

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Double-channel planar buried-heterostructure laser diode with effective current confinement

Electronics Letters ◽

10.1049/el:19820655 ◽

1982 ◽

Vol 18 (22) ◽

pp. 953 ◽

Author(s):

I. Mito ◽

M. Kitamura ◽

Ke. Kobayashi ◽

Ko. Kobayashi

Keyword(s):

Laser Diode ◽

Effective Current ◽

Heterostructure Laser ◽

Current Confinement ◽

Buried Heterostructure ◽

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Low‐threshold 1.3‐μm GaInAsP/InP buried heterostructure lasers by liquid phase epitaxy and metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.92697 ◽

1981 ◽

Vol 39 (3) ◽

pp. 188-189 ◽

Author(s):

Willie Ng ◽

C. S. Hong ◽

H. Manasevit ◽

P. D. Dapkus

Keyword(s):

Chemical Vapor Deposition ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Buried Heterostructure ◽

Low Threshold ◽

Metalorganic Chemical

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Lattice Image Contrasts around Heterointerface in GaxIn1-xAsyP1-y/InP Laser Diode Wafer Grown by Liquid Phase Epitaxy

Journal of Electron Microscopy ◽

10.1093/oxfordjournals.jmicro.a050709 ◽

1989 ◽

Keyword(s):

Liquid Phase ◽

Laser Diode ◽

Liquid Phase Epitaxy ◽

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Optical and electro-optical investigation InP/InGaAsP buried heterostructure laser diode and fabrication of single lateral mode laser arrays on multi-channelled substrate

16th Congress of the International Commission for Optics: Optics as a Key to High Technology ◽

10.1117/12.2308441 ◽

1993 ◽

Author(s):

V. Rakovics

Keyword(s):

Laser Diode ◽

Optical Investigation ◽

Laser Arrays ◽

Heterostructure Laser ◽

Buried Heterostructure ◽

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Low temperature liquid phase epitaxy growth for room‐temperature cw operation of 1.55‐μm InGaAsP/InP double‐heterostructure laser

Applied Physics Letters ◽

10.1063/1.91473 ◽

1980 ◽

Vol 36 (4) ◽

pp. 309-310 ◽

Author(s):

K. Takahei ◽

H. Hagai ◽

H. Kawaguchi

Keyword(s):

Liquid Phase ◽

Low Temperature ◽

Liquid Phase Epitaxy ◽

Room Temperature ◽

Double Heterostructure ◽

Cw Operation ◽

Heterostructure Laser ◽

Temperature Liquid

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