Selective Area Growth of Magnetic Garnet Crystals by Liquid-Phase Epitaxy

1999 ◽  
Vol 587 ◽  
Author(s):  
H. Yokoi ◽  
T. Mizumoto
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Energy ◽  
Selective Area Growth ◽  
X Ray ◽  
Selective Area ◽  
Light Waves ◽  
Area Growth ◽  
One Step ◽  
Magnetic Garnet

AbstractSelective area growth of magnetic garnet crystals was studied by liquid-phase epitaxy. The garnet layers grown on Ti-masked substrates were analyzed under a scanning electron microscope, and by X-ray diffraction measurements, energy-dispersive X-ray analysis and reflection high-energy electron diffraction. Narrow stripes in the Ti mask were designed to form waveguides by one-step growth. The light waves could be guided within the waveguide fabricated by selective area liquid-phase epitaxy.

X-ray microdiffraction studies of InGaAsP selective-area growth layers

2018 ◽  
pp. 229-232
Author(s):  
S Kimura ◽  
K Izumi ◽  
Y Tsusaka ◽  
Y Kagoshima ◽  
J Matsui
Keyword(s):  
Selective Area Growth ◽  
X Ray ◽  
Selective Area ◽  
Area Growth

scholarly journals X RAY DOUBLE CRYSTAL DIFFRACTION STUDY OF (BiTm)3(FeGa)5O12 MAGNETIC GARNET FILMS GROWN BY LIQUID PHASE EPITAXY

1989 ◽  
Vol 38 (10) ◽  
pp. 1704
Author(s):  
TIAN LIANG-GUANG ◽  
LIU XIANG-LIN ◽  
XU SHUN-SHENG ◽  
HAN XIAO-XI
Keyword(s):  
Liquid Phase ◽  
Diffraction Study ◽  
Liquid Phase Epitaxy ◽  
Double Crystal ◽  
X Ray ◽  
Garnet Films ◽  
Magnetic Garnet

Measurement of Strain Distribution in InGaAsP Selective-Area Growth Layers Using a Micro-Area X-Ray Diffraction Method with Sub-µm Spatial Resolution

2002 ◽  
Vol 41 (Part 2, No. 9A/B) ◽  
pp. L1013-L1015 ◽  
Author(s):  
Shigeru Kimura ◽  
Yasushi Kagoshima ◽  
Kenji Kobayashi ◽  
Koichi Izumi ◽  
Yasutaka Sakata ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Strain Distribution ◽  
Diffraction Method ◽  
Selective Area Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selective Area ◽  
Area Growth ◽  
Area X

Liquid Phase Epitaxy of Si1−xGex(O<×≲1) On Partially Masked Si-Substrates

1987 ◽  
Vol 91 ◽  
Author(s):  
H.-P. Trah ◽  
M.I. Alonso ◽  
M. Konuma ◽  
E. Bauser ◽  
H. Cerva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Seeded Growth ◽  
X Ray ◽  
Si Substrates ◽  
Lateral Overgrowth ◽  
Linear Dimensions ◽  
Transmission Electron ◽  
One Step

ABSTRACTSingle-crystal Si1−x Gex(O<×≲1) layers are grown by seeded growth on partially SiO2-masked Si-substrates, using a one-step liquid phase epitaxy (LPE) process. The seed regions are stripe- and hole-shaped windows in the oxide, having linear dimensions between 1.5 and 100 μm. The windows extend in different orientation on (111) and (100) orientated substrates. Lateral overgrowth over the oxide-masked areas is achieved up to 70 μm in <110>-directions. X-ray diffraction and Raman scattering show that the epitaxial islands are homogeneous and of excellent crystal quality. In the regions of lateral overgrowth the dislocation density is reduced considerably as shown by defect-etching and cross section transmission electron microscopy.

One Step Nano-Selective Area Growth of Localized InAs/InP Quantum Dots For Single Photon Source Applications

2009 ◽  
Vol 1228 ◽  
Author(s):  
Noelle Gogneau ◽  
Luc Le Gratiet ◽  
Richard Hostein ◽  
Bruno Fain ◽  
Ludovic Largeau ◽  
...  
Keyword(s):  
Single Photon ◽  
Vapour Phase ◽  
Active Species ◽  
Selective Area Growth ◽  
Vapour Phase Epitaxy ◽  
Precise Control ◽  
Inhibition Of Growth ◽  
Selective Area ◽  
Area Growth ◽  
One Step

AbstractWe demonstrate the feasibility of a new approach of Nano Selective Area Growth (Nano-SAG) to precisely localize InAs/InP QDs, by low-pressure Metalorganic Vapour Phase Epitaxy (MOVPE). This approach is based on a partial patterning with a dielectric mask containing nano-openings. The two main advantages of MOVPE are: the important diffusion length of the active species and the inhibition of growth on the dielectric mask. We demonstrate the synthesis of localized nanostructures with high structural properties and the precise control of their dimensions at the nanometer scale. This allows in principle the precise control of the tunability of the emission length.

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