The impact of the stray inductances originated from interconnects in power electronics becomes crucial with the next generation of SiC devices. This paper shows that the existing layout of a railway inverter, operating with Si IGBTs already exhibits a dynamic current imbalance between paralleled modules. This will not allow using this geometry with SiC MOSFETs. A complete investigation of the electromagnetic origin of this issue has been performed. A generic circuit model has been proposed to establish a cabling rule to design a Gate Distribution Printed Circuit Board (PCB) in such a way that it compensates the power dissymmetry. An optimization strategy has been used to obtain a new geometry of this PCB, which has been validated with a time domain simulation.
Time domain coupling to a device on a printed circuit board inside a cavity
