Influence of Lattice Strain on Phase Separation and Percolative Behaviors in La0.325Pr0.3Ca0.375 MnO3 Thin Films

2015 ◽  
Vol 51 (11) ◽  
pp. 1-4
Author(s):  
Y. Y. Zhao ◽  
J. Wang ◽  
F. X. Hu ◽  
H. Kuang ◽  
Y. Liu ◽  
...  
2014 ◽  
Vol 115 (17) ◽  
pp. 17D708 ◽  
Author(s):  
Y. Y. Zhao ◽  
J. Wang ◽  
F. X. Hu ◽  
H. Kuang ◽  
R. R. Wu ◽  
...  

2011 ◽  
Vol 84 (15) ◽  
Author(s):  
S. G. Altendorf ◽  
A. Efimenko ◽  
V. Oliana ◽  
H. Kierspel ◽  
A. D. Rata ◽  
...  
Keyword(s):  

2004 ◽  
Vol 84 (5) ◽  
pp. 777-779 ◽  
Author(s):  
Y. P. Lee ◽  
S. Y. Park ◽  
V. G. Prokhorov ◽  
V. A. Komashko ◽  
V. L. Svetchnikov

2012 ◽  
Vol 3 (6) ◽  
pp. 683-688 ◽  
Author(s):  
Matthias A. Ruderer ◽  
Robert Meier ◽  
Lionel Porcar ◽  
Robert Cubitt ◽  
Peter Müller-Buschbaum

2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
Panya Khaenamkaew ◽  
Dhonluck Manop ◽  
Chaileok Tanghengjaroen ◽  
Worasit Palakawong Na Ayuthaya

The electrical properties of tin dioxide (SnO2) nanoparticles induced by low calcination temperature were systematically investigated for gas sensing applications. The precipitation method was used to prepare SnO2 powders, while the sol-gel method was adopted to prepare SnO2 thin films at different calcination temperatures. The characterization was done by X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM). The samples were perfectly matched with the rutile tetragonal structure. The average crystallite sizes of SnO2 powders were 45 ± 2, 50 ± 2, 62 ± 2, and 65 ± 2 nm at calcination temperatures of 300, 350, 400, and 450°C, respectively. SEM images and AFM topographies showed an increase in particle size and roughness with the rise in calcination temperature. The dielectric constant decreased with the increase in the frequency of the applied signals but increased on increasing calcination temperature. By using the UV-Vis spectrum, the direct energy bandgaps of SnO2 thin films were found as 4.85, 4.80, 4.75, and 4.10 eV for 300, 350, 400, and 450°C, respectively. Low calcination temperature as 300°C allows smaller crystallite sizes and lower dielectric constants but increases the surface roughness of SnO2, while lattice strain remains independent. Thus, low calcination temperatures of SnO2 are promising for electronic devices like gas sensors.


2001 ◽  
Vol 670 ◽  
Author(s):  
Akira Nishiyama ◽  
Akio Kaneko ◽  
Masato Koyama ◽  
Yoshiki Kamata ◽  
Ikuo Fujiwara ◽  
...  

ABSTRACTTi-Si-O films were sputter deposited from TiO2+SiO2 composite targets with various SiO2 content. The phase separation occurred for every SiO2 content used in this experiment (from 14% to 75%) and it has been revealed that nanocrystalline (TiO2)1-x(SiO2)x films in which anatase TiO2 forms tiny grains were obtained when x in the film is larger than 0.26. The tiny grain was effective for suppressing the thermal grooving phenomenon of the thin films by the post deposition annealing which leads to the leakage current increase. The dielectric constant of the nanocrystalline film was varied with the SiO2 content from the value of the bulk anatase to SiO2.


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