Complementary Spintronic Logic With Spin Hall Effect-Driven Magnetic Tunnel Junction

2015 ◽  
Vol 51 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Wang Kang ◽  
Chentian Zheng ◽  
Youguang Zhang ◽  
Dafine Ravelosona ◽  
Weifeng Lv ◽  
...  
Keyword(s):  
Hall Effect ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Hall Effect ◽  
Spintronic Logic

Spin Analog-to-Digital Convertor Using Magnetic Tunnel Junction and Spin Hall Effect

2015 ◽  
Vol 36 (5) ◽  
pp. 511-513 ◽  
Author(s):  
Yanfeng Jiang ◽  
Yang Lv ◽  
Mahdi Jamali ◽  
Jian-Ping Wang
Keyword(s):  
Hall Effect ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Hall Effect ◽  
Analog To Digital

Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper

2013 ◽  
Vol 102 (21) ◽  
pp. 212408 ◽  
Author(s):  
Michihiko Yamanouchi ◽  
Lin Chen ◽  
Junyeon Kim ◽  
Masamitsu Hayashi ◽  
Hideo Sato ◽  
...  
Keyword(s):  
Hall Effect ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Hall Effect

Performance analysis of differential spin hall effect (DSHE)-MRAM-based logic gates

Circuit World ◽  
2019 ◽  
Vol 45 (4) ◽  
pp. 300-310
Author(s):  
Piyush Tankwal ◽  
Vikas Nehra ◽  
Sanjay Prajapati ◽  
Brajesh Kumar Kaushik
Keyword(s):  
Hall Effect ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Logic Gates ◽  
Cmos Technology ◽  
Spin Transfer Torque ◽  
Spin Hall Effect ◽  
Oxide Semiconductor ◽  
Content Type

Purpose The purpose of this paper is to analyze and compare the characteristics of hybrid conventional complementary metal oxide semiconductor/magnetic tunnel junction (CMOS/MTJ) logic gates based on spin transfer torque (STT) and differential spin Hall effect (DSHE) magnetic random access memory (MRAM). Design/methodology/approach Spintronics technology can be used as an alternative to CMOS technology as it is having comparatively low power dissipation, non-volatility, high density and high endurance. MTJ is the basic spin based device that stores data in form of electron spin instead of charge. Two mechanisms, namely, STT and SHE, are used to switch the magnetization of MTJ. Findings It is observed that the power consumption in DSHE based logic gates is 95.6% less than the STT based gates. DSHE-based write circuit consumes only 5.28 fJ energy per bit. Originality/value This paper describes how the DSHE-MRAM is more effective for implementing logic circuits in comparison to STT-MRAM.

Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions

2016 ◽  
Vol 49 (6) ◽  
pp. 065008 ◽  
Author(s):  
Wang Kang ◽  
Zhaohao Wang ◽  
Youguang Zhang ◽  
Jacques-Olivier Klein ◽  
Weifeng Lv ◽  
...  
Keyword(s):  
Hall Effect ◽  
Design Methodology ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Hall Effect ◽  
Logic Design ◽  
Spintronic Logic

Magnetic Tunnel Junction-Based Spintronic Logic Units Operated by Spin Transfer Torque

2012 ◽  
Vol 11 (1) ◽  
pp. 120-126 ◽  
Author(s):  
Xiaofeng Yao ◽  
Jonathan Harms ◽  
Andrew Lyle ◽  
Farbod Ebrahimi ◽  
Yisong Zhang ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spintronic Logic
Sign in / Sign up

Export Citation Format

Share Document