Fully Nonvolatile and Low Power Full Adder Based on Spin Transfer Torque Magnetic Tunnel Junction With Spin-Hall Effect Assistance

2018 ◽  
Vol 54 (12) ◽  
pp. 1-7 ◽  
Author(s):  
Abdolah Amirany ◽  
Ramin Rajaei
Keyword(s):  
Low Power ◽  
Hall Effect ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Full Adder ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Hall Effect

Synchronous 8-bit Non-Volatile Full-Adder based on Spin Transfer Torque Magnetic Tunnel Junction

2015 ◽  
Vol 62 (7) ◽  
pp. 1757-1765 ◽  
Author(s):  
Erya Deng ◽  
Yue Zhang ◽  
Wang Kang ◽  
Bernard Dieny ◽  
Jacques-Olivier Klein ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Full Adder ◽  
Spin Transfer Torque ◽  
Spin Transfer

Double Magnetic Tunnel Junction with switchable assistance layer for improved spin transfer torque magnetic memory performance

Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Sanchez Hazen ◽  
Stephane Auffret ◽  
Isabelle Joumard ◽  
Laurent Vila ◽  
Liliana Buda-Prejbeanu ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Memory Performance ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Memory ◽  
Memory Cells ◽  
Experimental Demonstration

This paper reports the first experimental demonstration of a new concept of double magnetic tunnel junction comprising a magnetically switchable assistance layer. These double junctions are used as memory cells...

Reliable majority voter based on spin transfer torque magnetic tunnel junction device

2016 ◽  
Vol 52 (1) ◽  
pp. 47-49 ◽  
Author(s):  
P.F. Butzen ◽  
M. Slimani ◽  
Y. Wang ◽  
H. Cai ◽  
L.A.B. Naviner
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Junction Device ◽  
Majority Voter

Performance analysis of differential spin hall effect (DSHE)-MRAM-based logic gates

Circuit World ◽  
2019 ◽  
Vol 45 (4) ◽  
pp. 300-310
Author(s):  
Piyush Tankwal ◽  
Vikas Nehra ◽  
Sanjay Prajapati ◽  
Brajesh Kumar Kaushik
Keyword(s):  
Hall Effect ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Logic Gates ◽  
Cmos Technology ◽  
Spin Transfer Torque ◽  
Spin Hall Effect ◽  
Oxide Semiconductor ◽  
Content Type

Purpose The purpose of this paper is to analyze and compare the characteristics of hybrid conventional complementary metal oxide semiconductor/magnetic tunnel junction (CMOS/MTJ) logic gates based on spin transfer torque (STT) and differential spin Hall effect (DSHE) magnetic random access memory (MRAM). Design/methodology/approach Spintronics technology can be used as an alternative to CMOS technology as it is having comparatively low power dissipation, non-volatility, high density and high endurance. MTJ is the basic spin based device that stores data in form of electron spin instead of charge. Two mechanisms, namely, STT and SHE, are used to switch the magnetization of MTJ. Findings It is observed that the power consumption in DSHE based logic gates is 95.6% less than the STT based gates. DSHE-based write circuit consumes only 5.28 fJ energy per bit. Originality/value This paper describes how the DSHE-MRAM is more effective for implementing logic circuits in comparison to STT-MRAM.

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