Union Bound Analysis for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM) with Channel Quantization

IEEE Transactions on Magnetics ◽

10.1109/tmag.2021.3084210 ◽

2021 ◽

pp. 1-1

Author(s):

Xingwei Zhong ◽

Kui Cai ◽

Guanghui Song

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Torque ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Spin Torque Transfer ◽

Channel Quantization ◽

Union Bound ◽

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On Channel Quantization for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Transactions on Communications ◽

10.1109/tcomm.2019.2938747 ◽

2019 ◽

Vol 67 (11) ◽

pp. 7526-7539

Author(s):

Zhen Mei ◽

Kui Cai ◽

Long Shi ◽

Xuan He

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Torque ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Spin Torque Transfer ◽

Channel Quantization

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Design of LUT-Based LDPC Decoders for Spin-Torque Transfer Magnetic Random Access Memory

IEEE Transactions on Magnetics ◽

10.1109/tmag.2021.3137556 ◽

2021 ◽

pp. 1-1

Author(s):

Chatuporn Duangthong ◽

Watid Phakphisut ◽

Pornchai Supnithi

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Torque ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Spin Torque Transfer

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Modeling of failure probability and statistical design of spin-torque transfer magnetic random access memory (STT MRAM) array for yield enhancement

Proceedings of the 45th annual conference on Design automation - DAC '08 ◽

10.1145/1391469.1391540 ◽

2008 ◽

Author(s):

Jing Li ◽

Charles Augustine ◽

Sayeef Salahuddin ◽

Kaushik Roy

Keyword(s):

Failure Probability ◽

Random Access ◽

Statistical Design ◽

Random Access Memory ◽

Yield Enhancement ◽

Spin Torque ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Spin Torque Transfer

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Transistor-Less Spin Torque Transfer Magnetic Random Access Memory Cell Design

IEEE Transactions on Magnetics ◽

10.1109/tmag.2015.2440178 ◽

2015 ◽

Vol 51 (11) ◽

pp. 1-4

Author(s):

Weizhong Wang

Keyword(s):

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Spin Torque ◽

Cell Design ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Spin Torque Transfer

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Rate-Compatible Protograph LDPC Codes for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)

2018 Asia-Pacific Magnetic Recording Conference (APMRC) ◽

10.1109/apmrc.2018.8601078 ◽

2018 ◽

Author(s):

Xingwei Zhong ◽

Kui Cai ◽

Pingping Chen ◽

Zhen Mei

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Torque ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Spin Torque Transfer

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Effect of Self-Heating on Time-Dependent Dielectric Breakdown in Ultrathin MgO Magnetic Tunnel Junctions for Spin Torque Transfer Switching Magnetic Random Access Memory

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dd15 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DD15 ◽

Author(s):

Keiji Hosotani ◽

Makoto Nagamine ◽

Tomomasa Ueda ◽

Hisanori Aikawa ◽

Sumio Ikegawa ◽

...

Keyword(s):

Dielectric Breakdown ◽

Tunnel Junctions ◽

Random Access ◽

Random Access Memory ◽

Spin Torque ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Self Heating ◽

Time Dependent Dielectric Breakdown ◽

Spin Torque Transfer

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Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04em07 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EM07 ◽

Author(s):

Chika Tanaka ◽

Keiko Abe ◽

Hiroki Noguchi ◽

Kumiko Nomura ◽

Kazutaka Ikegami ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Static Random Access Memory ◽

Spin Torque ◽

Memory Cells ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Spin Torque Transfer

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Interconnects scaling challenge for sub-20nm spin torque transfer magnetic random access memory technology

IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2014.6831830 ◽

2014 ◽

Author(s):

Tai Min ◽

Zsolt Tokei ◽

Gouri Sankar Kar ◽

Stefan Coseman ◽

Joost Bekaert ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Torque ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Spin Torque Transfer

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Polar Code and Symbol Mapping Design for Multi-Level Cell Spin-Torque Transfer Magnetic Random Access Memory

IEEE Transactions on Magnetics ◽

10.1109/tmag.2021.3085094 ◽

2021 ◽

pp. 1-1

Author(s):

Sana Javed ◽

Ubaid U. Fayyaz ◽

Tayyeb Mahmood

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Torque ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Spin Torque Transfer ◽

Symbol Mapping ◽

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A high-speed current mode sense amplifier for Spin-Torque Transfer Magnetic Random Access Memory

2010 53rd IEEE International Midwest Symposium on Circuits and Systems ◽

10.1109/mwscas.2010.5548588 ◽

2010 ◽

Author(s):

Chia-Tsung Cheng ◽

Yu-Chang Tsai ◽

Kuo-Hsing Cheng

Keyword(s):

Random Access ◽

Random Access Memory ◽

Current Mode ◽

Spin Torque ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Sense Amplifier ◽

Spin Torque Transfer

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