A Positive Resistance Up-Converter for Ultra-Low-Noise Amplification

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.1966.1126339 ◽

1966 ◽

Vol 14 (12) ◽

pp. 608-618 ◽

Author(s):

E. Sard ◽

B. Peyton ◽

S. Okwit

Keyword(s):

Low Noise ◽

Noise Amplification ◽

Ultra Low Noise

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Practical Application of a Positive Resistance Up-Converter for Ultra-Low-Noise Amplification

10.1109/gmtt.1966.1122524 ◽

2005 ◽

Author(s):

E. Sard ◽

B. Peyton ◽

S. Okwit

Keyword(s):

Low Noise ◽

Practical Application ◽

Noise Amplification ◽

Ultra Low Noise

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Cryogenic ultra-low noise amplification - InP PHEMT vs. GaAs MHEMT

2013 International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.2013.6562600 ◽

2013 ◽

Author(s):

J. Schleeh ◽

H. Rodilla ◽

N. Wadefalk ◽

P. A. Nilsson ◽

J. Grahn

Keyword(s):

Low Noise ◽

Noise Amplification ◽

Ultra Low Noise

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Ultra-low-noise amplification on a 100-micron-scale chip

Metro and Data Center Optical Networks and Short-Reach Links ◽

10.1117/12.2287477 ◽

2018 ◽

Author(s):

Amr S. Helmy

Keyword(s):

Low Noise ◽

Noise Amplification ◽

Ultra Low Noise

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Development of Ultra-Low Noise, High Sensitivity Planar Metal Grating Coupled III-V Multiquantum Well Infrared Detectors for Focal Plane Array Staring IR Sensor Systems

10.21236/ada265599 ◽

1993 ◽

Author(s):

Shang S. Li

Keyword(s):

Focal Plane ◽

Infrared Detectors ◽

High Sensitivity ◽

Focal Plane Array ◽

Low Noise ◽

Sensor Systems ◽

Metal Grating ◽

Ir Sensor ◽

Ultra Low Noise ◽

Multiquantum Well

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Ultra-Low Noise Schottky Junction Tri-Gate Silicon Nanowire FET on Bonded Silicon-on-Insulator Substrate

IEEE Electron Device Letters ◽

10.1109/led.2021.3057285 ◽

2021 ◽

Vol 42 (4) ◽

pp. 469-472

Author(s):

Yingtao Yu ◽

Si Chen ◽

Qitao Hu ◽

Paul Solomon ◽

Zhen Zhang

Keyword(s):

Silicon Nanowire ◽

Low Noise ◽

Silicon On Insulator ◽

Schottky Junction ◽

Ultra Low Noise ◽

Insulator Substrate

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Ultra low-noise preamplifier for low-frequency noise measurements in electron devices

IEEE Transactions on Instrumentation and Measurement ◽

10.1109/19.69939 ◽

1991 ◽

Vol 40 (1) ◽

pp. 2-6 ◽

Author(s):

B. Neri ◽

B. Pellegrini ◽

R. Saletti

Keyword(s):

Low Frequency ◽

Low Noise ◽

Frequency Noise ◽

Low Frequency Noise ◽

Noise Measurements ◽

Electron Devices ◽

Ultra Low Noise ◽

Low Noise Preamplifier

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A cryogenic ultra-low noise CMOS preamplifier for point-contact HPGe detectors

2011 IEEE Nuclear Science Symposium Conference Record ◽

10.1109/nssmic.2011.6154219 ◽

2011 ◽

Author(s):

Xuezhou Zhu ◽

Zhi Deng ◽

Yulan Li ◽

Yinong Liu ◽

Qian Yue ◽

...

Keyword(s):

Point Contact ◽

Low Noise ◽

Hpge Detectors ◽

Cmos Preamplifier ◽

Ultra Low Noise

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Ultra low noise all niobium DC-SQUIDs

IEEE Transactions on Magnetics ◽

10.1109/20.133841 ◽

1991 ◽

Vol 27 (2) ◽

pp. 2997-3000 ◽

Author(s):

G.M. Daalmans ◽

L. Bar ◽

F.R. Bommel ◽

R. Kress ◽

D. Uhl

Keyword(s):

Low Noise ◽

Ultra Low Noise

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GaN HEMTs for low-noise amplification — status and challenges

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) ◽

10.1109/inmmic.2017.7927327 ◽

2017 ◽

Author(s):

Matthias Rudolph

Keyword(s):

Low Noise ◽

Gan Hemts ◽

Noise Amplification

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Characterizing the optical response of ultra-low-noise far-infrared 60–110 μm transition edge sensors

Review of Scientific Instruments ◽

10.1063/5.0025900 ◽

2020 ◽

Vol 91 (12) ◽

pp. 123104

Author(s):

E. A. Williams ◽

S. Withington ◽

D. J. Goldie ◽

C. N. Thomas ◽

P. A. R. Ade ◽

...

Keyword(s):

Far Infrared ◽

Optical Response ◽

Transition Edge Sensors ◽

Low Noise ◽

Transition Edge ◽

Ultra Low Noise

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