GaN HEMTs for low-noise amplification — status and challenges

Author(s):  
Matthias Rudolph
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.


2010 ◽  
Vol 20 (8) ◽  
pp. 453-455 ◽  
Author(s):  
Haifeng Sun ◽  
Andreas R. Alt ◽  
Hansruedi Benedickter ◽  
Eric Feltin ◽  
Jean-Francois Carlin ◽  
...  
Keyword(s):  

2017 ◽  
Vol 38 (7) ◽  
pp. 926-928 ◽  
Author(s):  
Tongde Huang ◽  
Olle Axelsson ◽  
Johan Bergsten ◽  
Mattias Thorsell ◽  
Niklas Rorsman

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 786 ◽  
Author(s):  
Massimiliano Rossi ◽  
Riccardo Liberati ◽  
Marco Frasca ◽  
John Richardson

It is quite common for transceivers to operate with the RF receiver and transmitter working on different time slots. Typical applications are radars and transceivers in the field of communications. Generally, the receiver is turned off when the transmitter broadcasts and vice versa. This is done in order to prevent the transmitter from blinding the receiver or causing the RF low noise amplification (LNA) stage to saturate. When keeping a receiver active, some leakage of RF energy is inevitable, and therefore shielding is applied to mitigate spurious signals. However, there are many applications wherein the receiver cannot be turned off. To address these applications, we investigate the design and performance of a fully-analog self-jamming canceller able to operate in UHF (Ultra High Frequency) RFID devices. While the traditional cost to design and build this type of topology can be quite high, our proposal is based on a low-cost physical approach. In addition to using common SMT (Surface Mount Technology) devices, we leveraged a new piece of modular technology offered by X-Microwave which allows designers to easily produce RF solutions with a broad portfolio of modular system drop-in blocks. A prototype was realized and the measured results are in close agreement with theoretical simulations. Significant damping of the leaked signal in the receiving channel was realized.


2020 ◽  
Vol 41 (8) ◽  
pp. 1173-1176
Author(s):  
Jeong-Sun Moon ◽  
Joel Wong ◽  
Bob Grabar ◽  
Mike Antcliffe ◽  
Peter Chen ◽  
...  
Keyword(s):  

Silicon ◽  
2020 ◽  
Author(s):  
Khushwant Sehra ◽  
Vandana Kumari ◽  
Mridula Gupta ◽  
Meena Mishra ◽  
D. S. Rawal ◽  
...  
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1999 ◽  
Vol 11 (6) ◽  
pp. 650-652 ◽  
Author(s):  
M. Hofer ◽  
M.E. Fermann ◽  
A. Galvanauskas ◽  
D. Harter ◽  
R.S. Windeler

2010 ◽  
Vol 31 (2) ◽  
pp. 105-107 ◽  
Author(s):  
Chia-Ta Chang ◽  
Heng-Tung Hsu ◽  
E.Y. Chang ◽  
Chien-I Kuo ◽  
Jui-Chien Huang ◽  
...  

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