Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances

2013 ◽  
Vol 61 (12) ◽  
pp. 4520-4533 ◽  
Author(s):  
Yuan-Hung Hsiao ◽  
Zuo-Min Tsai ◽  
Hsin-Chiang Liao ◽  
Jui-Chih Kao ◽  
Huei Wang

Power amplifiers are one of the most important functional blocks in the Radio Frequency (RF) frontend for reliable wireless communications. The power amplifiers amplify and boost the input signal to needed output power. The signal is amplified to create it sufficiently high for the transmitter to propagate the needed distance to the receiver. Such as power amplifiers are expected to need low-power communication while producing a relatively high output power with more efficiency. The trans-receiver has various blocks such as filters, Voltage Control Oscillator (VCO), Low Noise Amplifier (LNA) and power amplifier. Among these, the most power hungry device is a power amplifier. The efficiency of the power amplifier can be 100%, but practically it is just 55%. So, the scope of improvement in efficiency in a power amplifier will be an interesting and most challenging task. As well defined architecture, including linear functional block synthesis, which is complex in designing CMOS power amplifier for different applications. This article describes the different state-of-the-art design biasing class and advanced RF CMOS power amplifier for Industrial, Scientific, and Medical (ISM) band applications.


Author(s):  
Christopher Coleman ◽  
Gregory Lee ◽  
Tom Low ◽  
Dieter Vook ◽  
Barry Wu ◽  
...  

Author(s):  
Masaru Sato ◽  
Yoshitaka Niida ◽  
Atsushi Yamada ◽  
Junji Kotani ◽  
Shiro Ozaki ◽  
...  

Electronics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1228 ◽  
Author(s):  
Nguyen ◽  
Park ◽  
Hong

The millimeter-wave imaging approach is a promising candidate to satisfy the unmet needs of real-time biomedical imaging, such as resolution, focal area, and cost. As a part of the endeavor to make millimeter-wave imaging more feasible, this paper presents a CMOS oscillator generating a high output power at the millimeter-wave frequency range, with a high fundamental oscillation frequency. The proposed oscillator adopts a frequency-selective negative resistance topology to improve the negative transconductance and to increase the fundamental frequency of oscillation. The proposed oscillator was implemented in a 65 nm bulk CMOS process. The measured highest output power is –2.2 dBm at 190 GHz while dissipating 100 mW from a 2.8 V supply voltage.


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