A $V$ -Band Stacked HEMT Power Amplifier With 25-dBm Saturated Output Power in 0.1- $\mu \text{m}$ InGaAs Technology

Purpose This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems. Design/methodology/approach The direct input power dividing technique is used on the chip. Broadband input and output matching techniques are used for broadband Doherty operation. Findings The PA achieves a small-signal gain of 22.8 dB at 25.1 GHz and a saturated output power of 24.3 dBm at 25.1 GHz with a maximum power added efficiency of 31.7%. The PA occupies 1.56 mm2 (including pads) and consumes a maximum current of 79.91 mA from a 9 V supply. Originality/value In this paper, the author proposed a novel direct input dividing technique with broadband matching circuits using a low Q output matching technique, and demonstrated a fully-integrated Doherty PA across frequencies of 23.1∼27.2 GHz for long term evolution-license auxiliary access (LTE-LAA) handset applications.

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A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications

Circuit World ◽

10.1108/cw-05-2019-0046 ◽

2020 ◽

Vol 46 (4) ◽

pp. 243-248

Author(s):

Min Liu ◽

Panpan Xu ◽

Jincan Zhang ◽

Bo Liu ◽

Liwen Zhang

Keyword(s):

Output Power ◽

Power Amplifier ◽

High Power ◽

High Efficiency ◽

Common Source ◽

Power Performance ◽

Matching Network ◽

Content Type ◽

Power Added Efficiency ◽

Saturated Output Power

Purpose Power amplifiers (PAs) play an important role in wireless communications because they dominate system performance. High-linearity broadband PAs are of great value for potential use in multi-band system implementation. The purpose of this paper is to present a cascode power amplifier architecture to achieve high power and high efficiency requirements for 4.2∼5.4 GHz applications. Design/methodology/approach A common emitter (CE) configuration with a stacked common base configuration of heterojunction bipolar transistor (HBT) is used to achieve high power. T-type matching network is used as input matching network. To increase the bandwidth, the output matching networks are implemented using the two L-networks. Findings By using the proposed method, the stacked PA demonstrates a maximum saturated output power of 26.2 dBm, a compact chip size of 1.17 × 0.59 mm2 and a maximum power-added efficiency of 46.3 per cent. The PA shows a wideband small signal gain with less than 3 dB variation over working frequency. The saturated output power of the proposed PA is higher than 25 dBm between 4.2 and 5.4 GHz. Originality/value The technology adopted for the design of the 4.2-to-5.4 GHz stacked PA is the 2-µm gallium arsenide HBT process. Based on the proposed method, a better power performance of 3 dB improvement can be achieved as compared with the conventional CE or common-source amplifier because of high output stacking impedance.

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A Power Amplifier with Large High-Efficiency Range for 5G Communication

Sensors ◽

10.3390/s20195581 ◽

2020 ◽

Vol 20 (19) ◽

pp. 5581

Author(s):

Zhiwei Zhang ◽

Zhiqun Cheng ◽

Guohua Liu

Keyword(s):

Output Power ◽

Design Process ◽

Power Amplifier ◽

High Efficiency ◽

New Method ◽

Saturated Output Power ◽

Doherty Power Amplifier ◽

5G Communication

This paper presents a new method to design a Doherty power amplifier (DPA) with a large, high-efficiency range for 5G communication. This is through analyzing the drain-to-source capacitance (CDS) of DPAs, and adopting appropriate impedance of the peak device. A closed design process is proposed, to design the extended efficiency range DPA based on derived theories. For validation, a DPA with large efficiency range was designed and fabricated by using two equal devices. The measured results showed that the saturated output power was between 43.4 dBm and 43.7 dBm in the target band. Around 70% saturated drain efficiency is obtained with a gain of greater than 11 dB. Moreover, the obtained drain efficiency is larger than 50% at the 10 dB power back-off, when operating at 3.5 GHz. These superior performances illustrate that the implemented DPA can be applied well in 5G communication.

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A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE

2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bctm.2011.6082768 ◽

2011 ◽

Cited By ~ 7

Author(s):

Wei Tai ◽

L. Richard Carley ◽

David S. Ricketts

Keyword(s):

Output Power ◽

Power Amplifier ◽

Saturated Output Power

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Efficient technique for ultra broadband, linear power amplifier design

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078712000578 ◽

2012 ◽

Vol 4 (6) ◽

pp. 559-567 ◽

Cited By ~ 2

Author(s):

Ahmed Sayed ◽

Sebastian Preis ◽

Georg Boeck

Keyword(s):

Output Power ◽

Power Amplifier ◽

Impedance Matching ◽

Network Synthesis ◽

Circuit Performance ◽

Power Added Efficiency ◽

Starting Point ◽

Saturated Output Power ◽

Linear Power Amplifier ◽

Amplifier Design

In this paper, a 10 W ultra-broadband GaN power amplifier (PA) is designed, fabricated, and tested. The suggested design technique provides a more accurate starting point for matching network synthesis and better prediction of achievable circuit performance. A negative-image model was used to fit the extracted optimum impedances based on source-/load-pull technique and multi-section impedance matching networks were designed. The implemented amplifier presents an excellent broadband performance, resulting in a gain of 8.5 ± 0.5 dB, saturated output power of ≥10 W, and power added efficiency (PAE) of ≥23% over the whole bandwidth. The linearity performance has also been characterized. An output third-order intercept point (OIP3) of ≥45 dBm was extracted based on a two-tone measurement technique in the operating bandwidth with different frequency spacing values. The memory effect based on AM/AM and AM/PM conversions was also characterized using a modulated WiMAX signal of 10 MHz bandwidth at 5.8 GHz. Furthermore, a broadband Wilkinson combiner was designed for the same bandwidth with very low loss to extend the overall output power. Excellent agreement between simulated and measured PA performances was also achieved.

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