A V-Band GaN Power Amplifier with 34.9% PAE and 35.1 dBm Output Power

2021 ◽  
Author(s):  
Pouria Pazhouhesh ◽  
Jennifer Kitchen
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
V Band

A V-band eight-way combined solid-state power amplifier with 12.8 watt output power

2006 ◽  
Author(s):  
K. Ngo-Wah ◽  
J. Goel ◽  
Yeong-Chang Chou ◽  
R. Grundbacher ◽  
Richard Lai ◽  
...  
Keyword(s):  
Solid State ◽  
Output Power ◽  
Power Amplifier ◽  
State Power ◽  
V Band

Failure Localization in a Multistage S-Band Power Amplifier

2016 ◽  
Author(s):  
Clarence Rebello ◽  
Ted Kolasa ◽  
Parag Modi
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Fault Tree ◽  
Root Cause ◽  
Failure Investigation ◽  
Band Power ◽  
Cause Of Failure ◽  
Design Materials ◽  
Board Level ◽  
Failure Localization

Abstract During the search for the root cause of a board level failure, all aspects of the product must be revisited and investigated. These aspects encompass design, materials, and workmanship. In this discussion, the failure investigation involved an S-Band Power Amplifier assembly exhibiting abnormally low RF output power where initial troubleshooting did not provide a clear cause of failure. A detailed fault tree drove investigations that narrowed the focus to a few possible root causes. However, as the investigation progressed, multiple contributors were eventually discovered, some that were not initially considered.

РАЗРАБОТКА СВЧ МОНОЛИТНЫХ ИНТЕГРАЛЬНЫХ СХЕМ МИЛЛИМЕТРОВОГО ДИАПАЗОНА НА ОСНОВЕ GAAS ДЛЯ ПРИМЕНЕНИЯ В СОВРЕМЕННЫХ ИНФОРМАЦИОННОКОММУНИКАЦИОННЫХ СИСТЕМАХ НОВОГО ПОКОЛЕНИЯ (5G)

2020 ◽  
Vol 96 (3s) ◽  
pp. 321-324
Author(s):  
Е.В. Ерофеев ◽  
Д.А. Шишкин ◽  
В.В. Курикалов ◽  
А.В. Когай ◽  
И.В. Федин
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Integrated Circuit ◽  
Phase Shifter ◽  
Phase Error ◽  
Microwave Integrated Circuit ◽  
Gain Compression ◽  
Monolithic Microwave Integrated Circuit ◽  
And Performance ◽  
Power Capability

В данной работе представлены результаты разработки СВЧ монолитной интегральной схемы шестиразрядного фазовращателя и усилителя мощности диапазона частот 26-30 ГГц. СКО ошибки по фазе и амплитуде фазовращателя составили 1,2 град. и 0,13 дБ соответственно. Максимальная выходная мощность и КПД по добавленной мощности усилителя в точке сжатия Ку на 1 дБ составили 30 дБм и 20 % соответственно. This paper describes the design, layout, and performance of 6-bit phase shifter and power amplifier monolithic microwave integrated circuit (MMIC), 26-30 GHz band. Phase shifter MMIC has RMS phase error of 1.2 deg. And RMD amplitude error is 0.13 dB. MMIC power amplifier has output power capability of 30 dBm at 1 dB gain compression (P-1dB) and PAE of 20 %.

A compact H-band Power Amplifier with High Output Power

2021 ◽  
Author(s):  
Ahmed S. H. Ahmed ◽  
Utku Soylu ◽  
Munkyo Seo ◽  
Miguel Urteaga ◽  
Mark J. W. Rodwell
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Output Power ◽  
Band Power ◽  
High Output
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