Effects of oxidation process on the tunneling barrier structures in room-temperature operating silicon single-electron transistors

2002 ◽  
Vol 1 (4) ◽  
pp. 214-218 ◽  
Author(s):  
M. Saitoh ◽  
T. Murakami ◽  
T. Hiramoto
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Single Electron ◽  
Tunneling Barrier ◽  
Single Electron Transistors ◽  
Temperature Operating ◽  
Electron Transistors

scholarly journals Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

2017 ◽  
Vol 28 (12) ◽  
pp. 125208 ◽  
Author(s):  
Zahid A K Durrani ◽  
Mervyn E Jones ◽  
Chen Wang ◽  
Dixi Liu ◽  
Jonathan Griffiths
Keyword(s):  
Excited States ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
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