High-Resistive Tunnel Junctions for Room-Temperature-Operating Single-Electron Transistors Fabricated Using Chemical Oxidation of Tungsten Nanoparticles

Temperature Operating ◽

Electron Transistors ◽

Tungsten Nanoparticles

High resistive tunnel junctions for the room temperature operating single electron transistors fabricated using chemical oxidation of tungsten nano particles

2011 11th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2011.6144537 ◽

2011 ◽

Author(s):

P. Santosh Kumar Karre ◽

Daw Don Cheam ◽

Manoranjan Acharya ◽

Paul L. Bergstrom

Keyword(s):

Room Temperature ◽

Tunnel Junctions ◽

Chemical Oxidation ◽

Nano Particles ◽

Single Electron ◽

Temperature Operating ◽

Fabrication and characterization of room temperature operating single electron transistors using focused ion beam technologies

10.37099/mtu.dc.etds/65 ◽

2008 ◽

Author(s):

Prasanjit Santosh Karre

Keyword(s):

Room Temperature ◽

Focused Ion Beam ◽

Ion Beam ◽

Single Electron ◽

Temperature Operating ◽

Fabrication And Characterization ◽

Effects of oxidation process on the tunneling barrier structures in room-temperature operating silicon single-electron transistors

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2002.807379 ◽

2002 ◽

Vol 1 (4) ◽

pp. 214-218 ◽

Cited By ~ 15

Author(s):

M. Saitoh ◽

T. Murakami ◽

T. Hiramoto

Keyword(s):

Room Temperature ◽

Oxidation Process ◽

Single Electron ◽

Tunneling Barrier ◽

Temperature Operating ◽

On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels

2005 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2005.1596129 ◽

2006 ◽

Author(s):

K. Miyaji ◽

M. Kobayashi ◽

T. Ohtou ◽

M. Saitoh ◽

T. Hiramoto

Keyword(s):

Analytical Model ◽

Room Temperature ◽

Energy Levels ◽

Single Electron ◽

Quantum Energy ◽

Temperature Operating ◽

Compact analytical model for room-temperature-operating silicon single-electron transistors with discrete quantum energy levels

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2006.869949 ◽

2006 ◽

Vol 5 (3) ◽

pp. 167-173 ◽

Cited By ~ 30

Author(s):

K. Miyaji ◽

M. Saitoh ◽

T. Hiramoto

Keyword(s):

Analytical Model ◽

Room Temperature ◽

Energy Levels ◽

Single Electron ◽

Quantum Energy ◽

Temperature Operating ◽

Room temperature Nb/Nb oxide-based single-electron transistors

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650302 ◽

2002 ◽

Cited By ~ 3

Author(s):

J.-I. Shirakashi ◽

K. Matsumoto ◽

N. Miura ◽

M. Konagai

Keyword(s):

Room Temperature ◽

Single Electron ◽

Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

Nanotechnology ◽

10.1088/1361-6528/aa5ddd ◽

2017 ◽

Vol 28 (12) ◽

pp. 125208 ◽

Cited By ~ 7

Author(s):

Zahid A K Durrani ◽

Mervyn E Jones ◽

Chen Wang ◽

Dixi Liu ◽

Jonathan Griffiths

Keyword(s):

Excited States ◽

Quantum Confinement ◽

Room Temperature ◽

Single Electron ◽

Silicon Single Electron Transistors Operating at Room Temperature and Their Applications

Comprehensive Semiconductor Science and Technology ◽

10.1016/b978-0-44-453153-7.00032-8 ◽

2011 ◽

pp. 340-382

Author(s):

K. Miyaji ◽

T. Hiramoto

Keyword(s):

Room Temperature ◽

Single Electron ◽

Communications in Computer and Information Science - Computer Engineering and Technology ◽

A Full Adder Based on Hybrid Single-Electron Transistors and MOSFETs at Room Temperature

10.1007/978-3-642-41635-4_26 ◽

2013 ◽

pp. 244-250 ◽

Cited By ~ 1

Author(s):

Xiaobao Chen ◽

Zuocheng Xing ◽

Bingcai Sui

Keyword(s):

Room Temperature ◽

Full Adder ◽

Single Electron ◽

20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07) ◽

Fault Models and Device Yield of a Large Population of Room Temperature Operation Single-Electron Transistors

10.1109/vlsid.2007.183 ◽

2007 ◽

Author(s):

Daniel Mazor ◽

Michael L. Bushnell ◽

David J. Mulligan ◽

Richard J. Blaikie

Keyword(s):

Room Temperature ◽

Large Population ◽

Single Electron ◽

Fault Models ◽

Electron Transistors ◽

Room Temperature Operation