scholarly journals Dark Current Random Telegraph Signals in Solid-State Image Sensors

2013 ◽  
Vol 60 (6) ◽  
pp. 4323-4331 ◽  
Author(s):  
Cedric Virmontois ◽  
Vincent Goiffon ◽  
Mark S. Robbins ◽  
Laurie Tauziede ◽  
Herve Geoffray ◽  
...  
Keyword(s):  
Solid State ◽  
Dark Current ◽  
Image Sensors ◽  
Random Telegraph Signals

Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors

2011 ◽  
Vol 58 (6) ◽  
pp. 3085-3094 ◽  
Author(s):  
Cedric Virmontois ◽  
V. Goiffon ◽  
P. Magnan ◽  
O. Saint-Pe ◽  
S. Girard ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensors ◽  
Total Ionizing Dose ◽  
Displacement Damage ◽  
Damage Dose ◽  
Cmos Image Sensors ◽  
Random Telegraph Signals

scholarly journals In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image Sensors

2017 ◽  
Vol 64 (1) ◽  
pp. 19-26 ◽  
Author(s):  
Clementine Durnez ◽  
Vincent Goiffon ◽  
Cedric Virmontois ◽  
Jean-Marc Belloir ◽  
Pierre Magnan ◽  
...  
Keyword(s):  
Solid State ◽  
Dark Current ◽  
Image Sensors ◽  
Random Telegraph Signal ◽  
Depth Analysis ◽  
Radiation Induced ◽  
Multi Level

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

scholarly journals Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

2020 ◽  
Vol 67 (11) ◽  
pp. 4940-4946
Author(s):  
Clementine Durnez ◽  
Vincent Goiffon ◽  
Cedric Virmontois ◽  
Pierre Magnan ◽  
Laurent Rubaldo
Keyword(s):  
Dark Current ◽  
Random Telegraph Signals
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