High-Bandwidth Low-Inductance Current Shunt for Wide-Bandgap Devices Dynamic Characterization

Wide bandgap materials such as Silicon Carbide (SiC) has enabled the use of medium voltage unipolar devices like Metal-Oxide Field Effect Transistors (MOSFETs) and Junction Field Effect Transistors (JFETs), which can switch at much higher frequencies as compared to their silicon counterparts. It is therefore imperative to evaluate the performance of these medium voltage devices. In this paper, the static characterization and the switching performance of the new single die 3.3 kV, 45 A 4H-SiC MOSFET developed by Cree Inc are presented. The switching performance is measured through the conventional Double Pulse Test. Testing is done at a dc-link voltage of 1.5 kV for different values of current, and gate resistances.

Download Full-text

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

Journal of Microelectronics and Electronic Packaging ◽

10.4071/imaps.393 ◽

2013 ◽

Vol 10 (4) ◽

pp. 138-143 ◽

Cited By ~ 1

Author(s):

Christina DiMarino ◽

Zheng Chen ◽

Dushan Boroyevich ◽

Rolando Burgos ◽

Paolo Mattavelli

Keyword(s):

High Temperature ◽

Semiconductor Devices ◽

Wide Bandgap ◽

Current Gain ◽

Dynamic Characterization ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Unbiased Manner ◽

Insight Into

Focused on high-temperature (200°C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, ROHM, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200°C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

Download Full-text

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/hiten-mp15 ◽

2013 ◽

Vol 2013 (HITEN) ◽

pp. 000082-000087 ◽

Cited By ~ 1

Author(s):

Christina DiMarino ◽

Zheng Chen ◽

Dushan Boroyevich ◽

Rolando Burgos ◽

Paolo Mattavelli

Keyword(s):

High Temperature ◽

Semiconductor Devices ◽

Wide Bandgap ◽

Current Gain ◽

Dynamic Characterization ◽

Power Semiconductor ◽

Power Semiconductor Devices ◽

Unbiased Manner ◽

Insight Into

Focused on high-temperature (200 °C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, Rohm, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200 °C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

Download Full-text

Review and Bandwidth Measurement of Coaxial Shunt Resistors for Wide-Bandgap Devices Dynamic Characterization

2019 IEEE Energy Conversion Congress and Exposition (ECCE) ◽

10.1109/ecce.2019.8912750 ◽

2019 ◽

Cited By ~ 2

Author(s):

Wen Zhang ◽

Zheyu Zhang ◽

Fred Wang

Keyword(s):

Wide Bandgap ◽

Dynamic Characterization ◽

Bandwidth Measurement

Download Full-text

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088567 ◽

1991 ◽

Vol 49 ◽

pp. 850-851

Author(s):

F. A. Ponce ◽

R. L. Thornton ◽

G. B. Anderson

Keyword(s):

Semiconductor Lasers ◽

Wide Bandgap ◽

Semiconductor Diode ◽

Visible Range ◽

P System ◽

Misfit Dislocations ◽

Lattice Match ◽

Semiconductor Diode Laser ◽

Thin Film Semiconductors ◽

Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

Download Full-text