A Study of the Reliability of Microwave Transistors

1977 ◽  
Vol 13 (4) ◽  
pp. 354-361 ◽  
Author(s):  
D. LaCombe ◽  
R. Naster ◽  
J. Carroll
Keyword(s):  
Microwave Transistors

Powerful Gallium Nitride Microwave Transistors on Silicon Substrates

2020 ◽  
Vol 15 (2) ◽  
pp. 169-174
Author(s):  
Yu. V. Khrapovitskaya ◽  
M. Y. Chernykh ◽  
I. S. Ezubchenko ◽  
Yu. V. Grishchenko ◽  
I. O. Mayboroda ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Silicon Substrates ◽  
Microwave Transistors

Noise wave modeling of microwave transistors based on neural networks

2004 ◽  
Vol 41 (4) ◽  
pp. 294-297 ◽  
Author(s):  
Vera Markovi? ◽  
Olivera Proni? ◽  
Zlatica Marinkovi?
Keyword(s):  
Neural Networks ◽  
Wave Modeling ◽  
Microwave Transistors

scholarly journals Influence of technological factors on the characteristics of ohmic contacts of powerful AlGaN/GaN/SiC HEMT

2019 ◽  
Vol 21 (3) ◽  
pp. 182-193
Author(s):  
K. L. Enisherlova ◽  
B. K. Medvedev ◽  
E. M. Temper ◽  
V. I. Korneev
Keyword(s):  
Ohmic Contacts ◽  
Structural Features ◽  
Structural Defects ◽  
Conducting Layer ◽  
Leakage Currents ◽  
Surface Microrelief ◽  
Microwave Transistors ◽  
High Power Microwave ◽  
New Type ◽  
Power Microwave

Abstract. In this paper are considers the effect of the microrelief, dislocation structure and other defects of the epitaxial layers of the source and drain regions of the nitride HEMT transistors on the parameters of the formed ohmic contacts. The studies were carried out directly on high−power microwave transistors made of GaN/AlGaN/GaN/SiC heterostructures. Ohmic burning contacts were formed using the compositions Ti—Al—Mo—Au and Ti—Al—Ni—Au. To estimation the structural features of the contact areas, the surface microrelief at the interface of the burned contact/AlGaN and the defects formed on its surface was studied. It is shown that the resistance of the source and drain regions is largely determined by the surface microstructure at the boundary. Experimentally shown is the formation of a conducting layer in AlGaN under the ohmic contacts. The possibility of the formation of a new type of structural defects with a high aspect ratio in the contact and active areas of the devices during the formation of ohmic burned contacts is demonstrated. It is shown that the appearance of high densities of such defects leads to an increase of the device leakage currents.

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