Powerful Gallium Nitride Microwave Transistors on Silicon Substrates

2020 ◽  
Vol 15 (2) ◽  
pp. 169-174
Author(s):  
Yu. V. Khrapovitskaya ◽  
M. Y. Chernykh ◽  
I. S. Ezubchenko ◽  
Yu. V. Grishchenko ◽  
I. O. Mayboroda ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Silicon Substrates ◽  
Microwave Transistors

Gallium Nitride–Based Heterostructures on Silicon Substrates for Powerful Microwave Transistors

2019 ◽  
Vol 14 (7-8) ◽  
pp. 385-388
Author(s):  
I. S. Ezubchenko ◽  
M. Y. Chernykh ◽  
A. A. Andreev ◽  
J. V. Grishchenko ◽  
I. A. Chernykh ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Silicon Substrates ◽  
Microwave Transistors ◽  
Powerful Microwave

Pendeo-epitaxial growth of gallium nitride on silicon substrates

2000 ◽  
Vol 29 (3) ◽  
pp. 306-310 ◽  
Author(s):  
Thomas Gehrke ◽  
Kevin J. Linthicum ◽  
Edward Preble ◽  
Pradeep Rajagopal ◽  
Carsten Ronning ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Epitaxial Growth ◽  
Silicon Substrates

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Gallium-nitride-based LEDs on silicon substrates

1999 ◽  
Author(s):  
Nestor A. Bojarczuk ◽  
Supratik Guha
Keyword(s):  
Gallium Nitride ◽  
Silicon Substrates

Ku and Ka-band Gallium Nitride Monolithic Integrated Circuits on Silicon Substrates

2021 ◽  
Vol 50 (3) ◽  
pp. 155-160
Author(s):  
Yu. V. Fedorov ◽  
A. S. Bugaev ◽  
S. A. Gamkrelidze ◽  
D. L. Gnatyuk ◽  
O. S. Matveenko ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Integrated Circuits ◽  
Silicon Substrates ◽  
Ka Band ◽  
Monolithic Integrated Circuits

Power Characteristics of GaN Microwave Transistors on Silicon Substrates

2020 ◽  
Vol 46 (3) ◽  
pp. 211-214 ◽  
Author(s):  
I. A. Chernykh ◽  
S. M. Romanovskiy ◽  
A. A. Andreev ◽  
I. S. Ezubchenko ◽  
M. Y. Chernykh ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Microwave Transistors ◽  
Power Characteristics

Reliability of Gallium Nitride microwave transistors

2016 ◽  
Author(s):  
Enrico Zanoni ◽  
Gaudenzio Meneghesso ◽  
Matteo Meneghini ◽  
Antonio Stocco ◽  
Stefano Dalcanale ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Microwave Transistors
Sign in / Sign up

Export Citation Format

Share Document