scholarly journals Mechanisms for Power Deposition in Ar/SiH4 Capacitively Coupled RF Discharges

1986 ◽  
Vol 14 (2) ◽  
pp. 188-196 ◽  
Author(s):  
Mark J. Kushner
Keyword(s):  
Capacitively Coupled ◽  
Power Deposition ◽  
Rf Discharges

Estimation of Ion Impact Energies and Electrode Self-Bias Voltage in Capacitive RF Discharges

1987 ◽  
Vol 98 ◽  
Author(s):  
S. E. Savas
Keyword(s):  
Bias Voltage ◽  
Capacitively Coupled ◽  
Ion Flow ◽  
Rf Discharges ◽  
Self Bias ◽  
Ion Energies ◽  
Bias Ratio ◽  
Ionization Model ◽  
Ion Impact ◽  
Impact Energies

ABSTRACTThe dependences of the electrode self-bias voltage and the ratio of ion energies on electrode area ratio are calculated for a model of capacitively coupled rf discharges. It is assumed that concentric spherical elecrodes with fluid-like radial ion flow adequately models the ion motion, that sheath impedances are dominant, and that ionization processes in the glow are due to ohmically heated electrons. Results show that the ratio of ion energies impacting the smaller electrode to those on the larger depends on the ratio of electrode areas in a more complex manner than a power law.The reason for this is that sheath impedances are more resistive or capacitive at different times in the rf cycle. The self-bias ratio is found to depend relatively little on the ionization model or the pressure but differs substantially from the “power law” result. The agreement of measurements with the model is fairly good.

Spatial Concentrations of Silicon Atoms in RF Discharges of Silane

1984 ◽  
Vol 38 ◽  
Author(s):  
R. M. Roth ◽  
K. G. Spears ◽  
G. Wong
Keyword(s):  
Plasma Chemistry ◽  
Chamber Pressure ◽  
Capacitively Coupled ◽  
Sheath Region ◽  
Rf Discharges ◽  
Sheath Formation ◽  
Rf Glow Discharge ◽  
Dc Bias ◽  
Anode Sheath ◽  
State Concentration

AbstractA capacitively coupled rf glow discharge of silane in argon was studied to determine the spatial concentration of silicon atoms. Laserinduced fluorescence was used to determine the ground state concentration profiles. The fluorescence profiles clearly show the sharp boundaries of the sheath regions. The dc bias voltage, silane mole fractions, flow rates, and chamber pressure were all varied to establish the sensitivity of the silane profiles. The existing theory of sheath formation is used to qualitatively understand the existence of sharp spatial boundaries and the sensitivity of the anode sheath region to plasma chemistry.

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