Imaging of metal ions and nanoparticles on structured silicon surface using laser ablation-inductively coupled plasma-mass spectrometer for contamination control in semiconductor manufacturing process

2021 ◽  
pp. 1-1
Author(s):  
H. B. Lim ◽  
Katherine McLachlin ◽  
Ciaran Orconnor ◽  
Daniel Wiederin ◽  
Hyuck Ki Hong
Keyword(s):  
Laser Ablation ◽  
Metal Ions ◽  
Mass Spectrometer ◽  
Manufacturing Process ◽  
Inductively Coupled Plasma ◽  
Semiconductor Manufacturing ◽  
Silicon Surface ◽  
Contamination Control ◽  
Inductively Coupled

Exploration of a Helium Inductively Coupled Plasma/Mattauch—Herzog Mass Spectrometer for Simultaneous Multielement Analysis

1998 ◽  
Vol 52 (1) ◽  
pp. 161-167 ◽  
Author(s):  
Sang-Ho Nam ◽  
Akbar Montaser ◽  
Evan F. Cromwell
Keyword(s):  
Aluminum Alloy ◽  
Laser Ablation ◽  
Mass Spectrometer ◽  
Reference Materials ◽  
Inductively Coupled Plasma ◽  
Detection Limits ◽  
Standard Reference Materials ◽  
Aqueous Samples ◽  
Solid Materials ◽  
Inductively Coupled

A helium inductively coupled plasma (He ICP) was coupled with a low-resolution Mattauch–Herzog mass spectrometer (MHMS) for simultaneous ion detection. The potentials and limitations of the system were explored for the introduction of aqueous samples and for laser ablation sampling of solid materials including aluminum alloy, brass, fused ore, and glass standard reference materials. Compared to the data obtained with an Ar ICP on the same instrument, the detection limits were approximately 10 and 100 times worse for samples in solid and solution forms, respectively, partly due to the presence of a strong secondary discharge for the He ICP used with this instrument. In general, the ICP detection limits measured with the MHMS were 10–1000 times inferior to the data obtained with a quadrupole-based instrument.

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