Utilization of Direct Write Lithography to Develop Ultra High Aspect Ratio (>100:1) DRIE Silicon Pillars

Author(s):  
Julia Aebersold ◽  
Kevin Walsh ◽  
Michael Beggans
1993 ◽  
Vol 63 (8) ◽  
pp. 1116-1118 ◽  
Author(s):  
Wei Chen ◽  
Haroon Ahmed

2003 ◽  
Vol 777 ◽  
Author(s):  
J.A. van Kan ◽  
A.A. Bettiol ◽  
F. Watt

AbstractA new nuclear nanoprobe facility has been developed at the Centre for Ion Beam Applications (CIBA) in the Physics Department of the National University of Singapore. This facility is the first of its type dedicated to proton beam micromachining on a micron as well as a nano scale. The design and performance of the facility, which is optimized for 3D lithography with MeV protons, is discussed here. The system has been designed to be compatible with Si wafers up to 6”.The production of good quality high aspect ratio microstructures requires a lithographic technique capable of producing microstructures with smooth vertical sidewalls. In proton beam micromachining, a high energy (e.g. 2 MeV) proton beam is focused to a sub-100 nm spot size and scanned over a resist material (e.g. SU-8 and polymethylmethacrylate (PMMA)). When a proton beam interacts with matter it follows an almost straight path, the depth of which is dependent on the proton beam energy. These features enable the production of nanometer sized polymer structures. Experiments have shown that post-bake and curing steps are not required in this SU-8 process, reducing the effects of cracking and internal stress in the resist. Since proton beam micromachining is a fast direct write lithographic technique it has high potential for the production of high-aspect-ratio nano-structures.


2012 ◽  
Vol 5 (1) ◽  
pp. 1-5 ◽  
Author(s):  
D. Rajput ◽  
L. Costa ◽  
K. Lansford ◽  
A. Terekhov ◽  
W. Hofmeister

1995 ◽  
Vol 67 (13) ◽  
pp. 1877-1879 ◽  
Author(s):  
H. W. Lau ◽  
G. J. Parker ◽  
R. Greef ◽  
M. Hölling

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 232
Author(s):  
Frances I. Allen

Helium ion beam induced deposition using the gaseous precursor pentamethylcyclopentasiloxane is employed to fabricate high aspect ratio insulator nanostructures (nanopillars and nanocylinders) that exhibit charge induced branching. The branched nanostructures are analyzed by transmission electron microscopy. It is found that the side branches form above a certain threshold height and that by increasing the flow rate of the precursor, the vertical growth rate and branching phenomenon can be significantly enhanced, with fractalesque branching patterns observed. The direct-write ion beam nanofabrication technique described herein offers a fast single-step method for the growth of high aspect ratio branched nanostructures with site-selective placement on the nanometer scale.


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