Spatial variability in large area single and few-layer CVD graphene

Author(s):  
Clara F. Moldovan ◽  
Krzysztof Gajewski ◽  
Michele Tamagnone ◽  
Robert S. Weatherup ◽  
Hisashi Sugime ◽  
...  
2014 ◽  
Vol 16 (8) ◽  
pp. 3632 ◽  
Author(s):  
G. V. Bianco ◽  
M. Losurdo ◽  
M. M. Giangregorio ◽  
P. Capezzuto ◽  
G. Bruno
Keyword(s):  

Carbon ◽  
2014 ◽  
Vol 77 ◽  
pp. 814-822 ◽  
Author(s):  
Bian Wu ◽  
Hatice M. Tuncer ◽  
Anestis Katsounaros ◽  
Weiping Wu ◽  
Matthew T. Cole ◽  
...  

2015 ◽  
Vol 6 (14) ◽  
pp. 2745-2750 ◽  
Author(s):  
Felix Lang ◽  
Marc A. Gluba ◽  
Steve Albrecht ◽  
Jörg Rappich ◽  
Lars Korte ◽  
...  

2020 ◽  
Vol 31 (24) ◽  
pp. 21821-21831
Author(s):  
Chaitanya Arya ◽  
K. Kanishka H. De Silva ◽  
Masamichi Yoshimura

2017 ◽  
Vol 53 (67) ◽  
pp. 9308-9311 ◽  
Author(s):  
Felix Rösicke ◽  
Marc A. Gluba ◽  
Timur Shaykhutdinov ◽  
Guoguang Sun ◽  
Christoph Kratz ◽  
...  

The transfer of p-(N-maleimido)phenyl functionalized graphene has been shown to be robust and lossless.


2016 ◽  
Vol 6 (1) ◽  
Author(s):  
S. Goniszewski ◽  
M. Adabi ◽  
O. Shaforost ◽  
S. M. Hanham ◽  
L. Hao ◽  
...  

Abstract Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO2) substrates prior to CVD graphene transfer are measured. Beginning with graphene on untreated thermal oxidised silicon, a minimum conductivity (σ min ) occurring at gate voltage V g  = 15 V (Dirac Point) is measured. It was found that more aggressive treatments (O2 plasma and UV Ozone treatments) further increase the gate voltage of the Dirac point up to 65 V, corresponding to a significant increase of the level of p-doping displayed in the graphene. An electrowetting model describing the measured relationship between the contact angle (θ) of a water droplet applied to the treated substrate/graphene surface and an effective gate voltage from a surface charge density is proposed to describe biasing of V g at σ min and was found to fit the measurements with multiplication of a correction factor, allowing effective non-destructive approximation of substrate added charge carrier density using contact angle measurements.


2015 ◽  
Vol 32 (3) ◽  
pp. 518-527 ◽  
Author(s):  
Jacob Berg ◽  
Nikola Vasiljevíc ◽  
Mark Kelly ◽  
Guillaume Lea ◽  
Michael Courtney

AbstractThis paper presents an analysis of mean wind measurements from a coordinated system of long-range WindScanners. From individual scan patterns the mean wind field was reconstructed over a large area, and hence it highlights the spatial variability. From comparison with sonic anemometers, the quality of the WindScanner data is high, although the fidelity of the estimated vertical velocity component is significantly limited by the elevation angles of the scanner heads. The system of long-range WindScanners presented in this paper is close to being fully operational, with the pilot study herein serving not only as a proof of concept but also verifying expectations of reliable wind measurements over arbitrary three-dimensional volumes, in future sustained meteorological campaigns.


2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Thomas H. Bointon ◽  
Gareth F. Jones ◽  
Adolfo De Sanctis ◽  
Ruth Hill-Pearce ◽  
Monica F. Craciun ◽  
...  

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