AbstractThin-film CdTe solar cells are very promising for future cost-effective photovoltaics. The photovoltaic effect in these cells is based on the extraction of photoexcited carriers by the field provided by the CdTe/CdS heterojunction. An additional interface with non-rectifying characteristics is needed to close the external circuit on the other side of the CdTe thin film. Finally, the transport of photoexcited carriers is influenced by the presence of grain boundaries (GBs). In this contribution, we investigate several aspects of these interfaces and their effects on the operation of CdTe solar cells by electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements.
Excess dark currents and transients in thin-film CdTe solar cells: implications for cell stability and encapsulation of scribe lines and cell ends in modules
