Analysis of transient behavior of SiC power MOSFETs based on surface potential model and its application to boost converter

2016 ◽  
Author(s):  
Takafumi Okuda ◽  
Yohei Nakamura ◽  
Takashi Hikihara ◽  
Michihiro Shintani ◽  
Takashi Sato
Keyword(s):  
Surface Potential ◽  
Potential Model ◽  
Transient Behavior ◽  
Boost Converter ◽  
Power Mosfets

A surface potential-model based parameter extraction of Si–Ge-pocket n-TFET

2021 ◽  
Author(s):  
Sagarika Choudhury ◽  
Krishna Lal Baishnab ◽  
Koushik Guha ◽  
Jacopo Iannacci
Keyword(s):  
Surface Potential ◽  
Potential Model ◽  
Parameter Extraction ◽  
Model Based

Compact Surface Potential Model for FD SOI MOSFET Considering Substrate Depletion Region

2008 ◽  
Vol 55 (3) ◽  
pp. 789-795 ◽  
Author(s):  
Pradeep Agarwal ◽  
Govind Saraswat ◽  
M. Jagadesh Kumar
Keyword(s):  
Surface Potential ◽  
Potential Model ◽  
Depletion Region ◽  
Compact Surface ◽  
Soi Mosfet

A new boundary treatment:HF surface potential model applied to solid-state cluster calculations

1995 ◽  
Vol 54 (2) ◽  
pp. 89-92 ◽  
Author(s):  
Hong-Lin Liu ◽  
Nian-Yi Chen ◽  
Janos J. Ladik ◽  
P. Otto
Keyword(s):  
Solid State ◽  
Surface Potential ◽  
Potential Model ◽  
Cluster Calculations

Authors’ Reply to “Comments on ‘An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs”’

2020 ◽  
Vol 67 (7) ◽  
pp. 3016-3016
Author(s):  
Chunlei Wu ◽  
Ru Huang ◽  
Qianqian Huang ◽  
Chao Wang ◽  
Jiaxin Wang ◽  
...  
Keyword(s):  
Surface Potential ◽  
Potential Model ◽  
Tunnel Fets

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

2017 ◽  
Vol 6 (12) ◽  
pp. Q171-Q178 ◽  
Author(s):  
Qingzhi Wu ◽  
Yuehang Xu ◽  
Jianjun Zhou ◽  
Yuechan Kong ◽  
Tangsheng Chen ◽  
...  
Keyword(s):  
Surface Potential ◽  
Potential Model ◽  
Performance Comparison ◽  
Gan Hemts
Sign in / Sign up

Export Citation Format

Share Document