Smart Universal Parameter Fitting Method for Modeling Static SiC Power MOSFET Behavior

Author(s):  
Daniel A. Philipps ◽  
Dimosthenis Peftitsis
1990 ◽  
Author(s):  
Guanghe Liagn ◽  
Qinglin Liu ◽  
Qiaodeng He

2012 ◽  
Vol 19 (2) ◽  
pp. 381-394
Author(s):  
José Pereira ◽  
Octavian Postolache ◽  
Pedro Girão

Using A Segmented Voltage Sweep Mode and A Gaussian Curve Fitting Method to Improve Heavy Metal Measurement System PerformanceThis paper presents a voltammetric segmented voltage sweep mode that can be used to identify and measure heavy metals' concentrations. The proposed sweep mode covers a set of voltage ranges that are centered around the redox potentials of the metals that are under analysis. The heavy metal measurement system can take advantage of the historical database of measurements to identify the metals with higher concentrations in a given geographical area, and perform a segmented sweep around predefined voltage ranges or, alternatively, the system can perform a fast linear voltage sweep to identify the voltammetric current peaks and then perform a segmented voltage sweep around the set of voltages that are associated with the voltammetric current peaks. The paper also includes the presentation of two auto-calibration modes that can be used to improve system's reliability and proposes the usage of a Gaussian curve fitting of voltammetric data to identify heavy metals and to evaluate their concentrations. Several simulation and experimental results, that validate the theoretical expectations, are also presented in the paper.


Author(s):  
Norimichi Chinone ◽  
Yasuo Cho

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.


Author(s):  
Jing-jiang Yu ◽  
T. Yamaoka ◽  
T. Aiso ◽  
K. Watanabe ◽  
Y. Shikakura ◽  
...  

Abstract Scanning nonlinear dielectric microscopy is continuously developed as an AFM-derived method for 2D dopant profiling of semiconductor devices. In this paper, the authors apply 2D carrier density mapping to Si and SiC and succeed a high resolution observation of the SiC planar power MOSFET. Furthermore, they develop software that combines dC/dV and dC/dz images and expresses both density and polarity in a single distribution image. The discussion provides the details of AFM experiments that were conducted using a Hitachi environmental control AFM5300E system. The results indicated that the carrier density decreases in the boundary region between n plus source and p body. The authors conclude that although the resolutions of dC/dV and dC/dz are estimated to be 20 nm or less and 30 nm or less, respectively, there is a possibility that the resolution can be further improved by using a sharpened probe.


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