Terbium-Catalyzed Selective Area Growth of SiC Nanorods: Synthesis, Optimal Growth, and Field Emission Properties

2010 ◽  
Vol 93 (2) ◽  
pp. 488-493 ◽  
Author(s):  
Jin-Yuan Zhou ◽  
Zhi-Yong Chen ◽  
Xian-Bo Xu ◽  
Ming Zhou ◽  
Zi-Wei Ma ◽  
...  
Keyword(s):  
Field Emission ◽  
Optimal Growth ◽  
Selective Area Growth ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Selective Area ◽  
Area Growth

scholarly journals Sn-doped In2O3 nanowires: enhancement of electrical field emission by a selective area growth

2012 ◽  
Vol 7 (1) ◽  
pp. 684 ◽  
Author(s):  
Wen-Chih Chang ◽  
Cheng-Hsiang Kuo ◽  
Chien-Chang Juan ◽  
Pei-Jung Lee ◽  
Yu-Lun Chueh ◽  
...  
Keyword(s):  
Field Emission ◽  
Selective Area Growth ◽  
Electrical Field ◽  
Selective Area ◽  
Area Growth

scholarly journals Селективный рост методом молекулярно-пучковой эпитаксии массивов нитевидных нанокристаллов GaN на процессированных SiO-=SUB=-x-=/SUB=-/Si-подложках

2020 ◽  
Vol 46 (21) ◽  
pp. 32
Author(s):  
В.О. Гридчин ◽  
К.П. Котляр ◽  
Р.Р. Резник ◽  
Л.Н. Дворецкая ◽  
А.В. Парфеньева ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Growth Parameters ◽  
Optimal Growth ◽  
Morphological Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Seed Layers

We present the results on the selective-area growth of GaN nanowires using a molecular beam epitaxy technique on patterned SiOx/Si substrates without any seed layers. The patterned SiOx/Si substrates were prepared by the simple microlens photolithography method. The influence of the substrate temperature on the morphological properties of GaN nanowires was investigated. The optimal growth parameters for the selective-area growth of GaN nanowires were experimentally determined.

Enhanced Field Emission Properties of Carbon Nanotube Based Field Emitters by Dynamic Oxidation

2013 ◽  
Vol 9 (5) ◽  
pp. 619-623 ◽  
Author(s):  
Shama Parveen ◽  
Samina Husain ◽  
Avshish Kumar ◽  
Javid Ali ◽  
Mubashshir Husain ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Field Emitters ◽  
Dynamic Oxidation

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

scholarly journals Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 075013
Author(s):  
F. Meier ◽  
M. Protte ◽  
E. Baron ◽  
M. Feneberg ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
Sign in / Sign up

Export Citation Format

Share Document