Lead thioarsenate system PbS‐As 2 S 3 : glass formation, macroscopic and electric properties

Author(s):  
B. Alrifai ◽  
M. Kassem ◽  
M. Bokova ◽  
M. Fourmentin ◽  
C. Poupin ◽  
...  
1990 ◽  
Vol 51 (C4) ◽  
pp. C4-111-C4-117 ◽  
Author(s):  
L. J. GALLEGO ◽  
J. A. SOMOZA ◽  
H. M. FERNANDEZ ◽  
J. A. ALONSO

1972 ◽  
Vol 106 (3) ◽  
pp. 393 ◽  
Author(s):  
V.A. Alekseev ◽  
Aleksandr A. Andreev ◽  
V.Ya. Prokhorenko

2018 ◽  
Vol 40 (1) ◽  
pp. 93-106
Author(s):  
M. V. Kravchuk ◽  
V. A. Korchyn ◽  
V. P. Kobolev ◽  
N. I. Novik

2017 ◽  
Author(s):  
Massimiliano Galluzzi ◽  
Simone Bovio ◽  
Paolo Milani ◽  
Alessandro Podestà

We report on the modification of the electric properties of the imidazolium-based [BMIM][NTf2] ionic liquid upon surface confinement in the sub-monolayer regime. Solid-like insulating nanostructures of [BMIM][NTf2] spontaneously form on a variety of insulating substrates, at odd with the liquid and conductive nature of the same substances in the bulk phase. A systematic spatially resolved investigation by atomic force microscopy of the morphological, mechanical and electrical properties of [BMIM][NTf2] nanostructures showed that this liquid substance rearranges into lamellar nanostructures with a high degree of vertical order and enhanced resistance to mechanical compressive stresses and very intense electric fields, denoting a solid-like character. The morphological and structural reorganization has a profound impact on the electric properties of supported [BMIM][NTf2] islands, which behave like insulator layers with a relative dielectric constant between 3 and 5, comparable to those of conventional ionic solids, and significantly smaller than those measured in the bulk ionic liquid. These results suggest that in the solid-like ordered domains confined either at surfaces or inside the pores of the nanoporous electrodes of photo-electrochemical devices, the ionic mobility and the overall electrical properties can be significantly perturbed with respect to the bulk liquid phase, which would likely influence the<br>performance of the devices.<br>


2013 ◽  
Vol 28 (4) ◽  
pp. 409-414
Author(s):  
Yuan-Yuan GU ◽  
Kang CHEN ◽  
Hao JIANG ◽  
Jia-Wen JIAN
Keyword(s):  

2020 ◽  
Vol 12 (3) ◽  
pp. 03014-1-03014-5
Author(s):  
Fedir Ivashchyshyn ◽  
◽  
Dariusz Calus ◽  
Anna Pidluzhna ◽  
Piotr Chabecki ◽  
...  
Keyword(s):  

1995 ◽  
Vol 185 (1-2) ◽  
pp. 151-158 ◽  
Author(s):  
Miroslav Jamnický ◽  
Peter Znášik ◽  
Daniel Tunega ◽  
Malcolm D. Ingram
Keyword(s):  

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


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