Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Characterization of ZnO Thin Films Fabricated by Atomic Layer Deposition with Various Temperatures

2013 ◽  
Vol 650 ◽  
pp. 18-23 ◽  
Author(s):  
Tsai Cheng Li ◽  
Rwei Ching Chang ◽  
Pei Sin Jhu
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Zno Films ◽  
Sputtered Films ◽  
Layer Deposition ◽  
Substrate Temperatures

Atomic layer deposition (ALD) is utilized to grow high performance zinc oxide (ZnO) thin films, where the effects of ALD process temperature on the thin film properties are also studied in this work. Some major properties of the ALD ZnO films are characterized and compared with those of sputtered ZnO films. Significant differences are observed that the electrical resistances of the ALD ZnO films are largely improved, while the optical transmittances also increase. Nevertheless, the adhesion and mechanical properties of the ALD films are worse than the sputtered films because of the weak bonding in the ALD process. For various substrate temperatures, the ALD ZnO films with 200°C behave the best performance.

The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
H. Kim ◽  
C. Cabral ◽  
C. Lavoie ◽  
S.M. Rossnagel
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Barrier Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

AbstractTa films were grown by plasma-enhanced atomic layer deposition (PE-ALD) at temperatures from room temperature up to 300 °C using TaCl5 as source gas and RF plasma-produced atomic H as the reducing agent. Post-deposition ex situ chemical analyses showed that the main impurity is oxygen, incorporated during the air exposure prior to analysis with typically low Cl concentration below 1 at %. The X-ray diffraction indicates that ALD Ta films are amorphous or composed of nano-grains. The typical resistivity of ALD Ta films was 150-180 μΩ cm, which corresponds to that of β-Ta phase, at a wide range of growth parameters. The conformality of the film is 100 % up to an aspect ratio of 15:1 and 40 % for aspect ratio of 40:1. The thickness per cycle, corresponding to the growth rate, was measured by Rutherford back scattering as a function of various key growth parameters, including TaCl5 and H exposure time and growth temperature. The maximum thickness per cycle values were below 0.1 ML, probably due to the steric hindrance for TaCl5 adsorption. Bilayer structures consisting of Cu films deposited by sputtering and ALD Ta films with various thicknesses were prepared and the diffusion barrier properties of ALD Ta films were investigated by various analysis techniques consisting of X-ray diffraction, elastic light scattering, and resistance analysis. The results were compared with Ta thin films deposited by sputtering with comparable thicknesses. Also, the growth of TaN films by PE-ALD using consecutive exposures of atomic H and activated N2 is presented.

The Electrical and Optical Properties of Al-Doped ZnO Thin Films Prepared by Atomic Layer Deposition

2011 ◽  
Vol 306-307 ◽  
pp. 1402-1405 ◽  
Author(s):  
Jia Song ◽  
Hai Chuan Mu ◽  
Lai Xing Jiang ◽  
Gui Lin Yin ◽  
Zhen Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hexagonal Wurtzite Structure ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Layer Deposition ◽  
Vis Spectroscopy ◽  
Doped Zno ◽  
Xrd Patterns

Al-doped ZnO (AZO) thin films (~100nm) with low electrical resistivity and high transparency have been prepared by atomic layer deposition on glass and Si(111) substrates at 200 °C with different doping sequence. The films were systematically analyzed using X-ray diffraction, scanning electron microscope (SEM), UV-vis spectroscopy and Hall measurement. XRD patterns showed that all the films were well crystallized with hexagonal wurtzite structure with preferred orientation along (100) plane. The resisitivity of films deposited with doping sequence of DEZ/TMA/H2O was lower than that with other doping sequences. Results from SEM showed a worm-like shape and similar grain sizes of AZO films. Optical transparency of AZO films was measured to be >90% for wavelengths of 400-1000 nm.

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