Role of Interface Thermal Boundary Resistance, Straining and Morphology in Thermal Conductivity of a Set of Si-Ge Superlattices and Biomimetic Si-Ge Nanocomposites

Author(s):  
Vikas Samvedi ◽  
Vikas Tomar

Nanoscale engineered materials with tailored thermal properties are desirable for applications such as highly efficient thermoelectric, microelectronic and optoelectronic devices. It has been shown earlier that by judiciously varying interface thermal boundary resistance (TBR) thermal conductivity in nanostructures could be controlled. Two types of nanostructures that have gained significant attention owing to the presence of TBR are superlattices and nanocomposites. A systematic comparison of thermal behavior of superlattices and nanocomposites considering their characteristic structural factors such as periodicity and period length for superlattices, and morphology for nanocomposites, under different extents of straining at a range of temperatures remains to be performed. In this presented work, such analyses are performed for a set of Si-Ge superlattices and Si-Ge biomimetic nanocomposites using non-equilibrium molecular dynamics (NEMD) simulations at three different temperatures (400 K, 600 K, and 800 K) and at strain levels varying between −10% and 10%. The analysis of interface TBR contradicts the usual notion that each interface contributes equally to the heat transfer resistance in a layered structure. The dependence of thermal conductivity of superlattice on the direction of heat flow gives it a characteristic somewhat similar to a thermal diode as found in this study. The comparison of thermal behavior of superlattices and nanocomposites indicate that the nanoscale morphology differences between the superlattices and the nanocomposites lead to a striking contrast in the phonon spectral density, interfacial thermal boundary resistance, and thermal conductivity. Both compressive and tensile strains are observed to be important factors in tailoring the thermal conductivity of the analyzed superlattices, whereas have very insignificant influence on the thermal conductivity of the analyzed nanocomposites.

Author(s):  
Vikas Samvedi ◽  
Vikas Tomar

Nanoscale engineered materials with tailored thermal properties are desirable for applications such as highly efficient thermoelectric, microelectronic and optoelectronic devices. It has been shown earlier that by judiciously varying interface thermal boundary resistance (TBR) thermal conductivity in nanostructures could be controlled. Two types of nanostructures that have gained significant attention owing to the presence of TBR are superlattices and nanocomposites. A systematic comparison of thermal behavior of superlattices and nanocomposites considering their characteristic structural factors such as periodicity and period length for superlattices, and morphology for nanocomposites, under different extents of straining at a range of temperatures remains to be performed. In this presented work, such analyses are performed for a set of Si-Ge superlattices and Si-Ge biomimetic nanocomposites using non-equilibrium molecular dynamics (NEMD) simulations at three different temperatures (400 K, 600 K, and 800 K) and at strain levels varying between −10% and 10%. The analysis of interface TBR contradicts the usual notion that each interface contributes equally to the heat transfer resistance in a layered structure. The dependence of thermal conductivity of superlattice on the direction of heat flow gives it a characteristic somewhat similar to a thermal diode as found in this study. The comparison of thermal behavior of superlattices and nanocomposites indicate that the nanoscale morphology differences between the superlattices and the nanocomposites lead to a striking contrast in the phonon spectral density, interfacial thermal boundary resistance, and thermal conductivity. Both compressive and tensile strains are observed to be important factors in tailoring the thermal conductivity of the analyzed superlattices, whereas have very insignificant influence on the thermal conductivity of the analyzed nanocomposites.


Author(s):  
Christopher M. Stanley ◽  
Benjamin K. Rader ◽  
Braxton H. D. Laster ◽  
Mahsa Servati ◽  
Stefan K. Estreicher

2021 ◽  
Vol 218 (23) ◽  
pp. 2170063
Author(s):  
Christopher M. Stanley ◽  
Benjamin K. Rader ◽  
Braxton H. D. Laster ◽  
Mahsa Servati ◽  
Stefan K. Estreicher

Author(s):  
Junichiro Shiomi ◽  
Shigeo Maruyama

We report a non-equilibrium molecular dynamics (MD) study on heat conduction of finite-length single-walled carbon nanotubes (SWNTs). The length and diameter dependences of the thermal conductivity are quantified for a range of nanotube-lengths up to a micrometer at room temperature using two different temperature control techniques. A thorough investigation was carried out on the influence of intrinsic thermal boundary resistance between the temperature-controlled layers and the rest of the SWNT. The trend of length effect indicates a gradual transition from nearly pure ballistic phonon transport to diffusive-ballistic phonon transport. The nearly pure ballistic phonon transport was also confirmed by the minor diameter-dependence of thermal conductivity for short SWNTs. For longer SWNTs with stronger diffusive effect, the thermal conductivity is larger for SWNTs with smaller diameters.


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Masahiro Goto ◽  
Yibin Xu ◽  
Yohei Kinoshita ◽  
Mamoru Ishikiriyama ◽  
...  

We investigate the effects of Al doping on the thermal conductivity and thermal boundary resistance of a-Si thin films.


2019 ◽  
Vol 11 (50) ◽  
pp. 47507-47515 ◽  
Author(s):  
Tianjun Liu ◽  
Sheng-Ying Yue ◽  
Sinclair Ratnasingham ◽  
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...  

2011 ◽  
Vol 110 (3) ◽  
pp. 033113 ◽  
Author(s):  
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P. Iñiguez ◽  
J. Jiménez ◽  
M. Oudart ◽  
J. Nagle

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