Measurements of Piezoelectric Constant D33 of Lead Zirconate Titanate (PZT) Through Use of a Mini Impact Hammer

Author(s):  
Qing Guo ◽  
G. Z. Cao ◽  
I. Y. Shen

Lead Zirconate Titanate Oxide (PbZrxTi1−xO3 or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. This paper is to present a simple and low-cost method to measure piezoelectric constant d33 of PZT thin films, which is a major challenge encountered in the actuator development. We use an impact hammer with a sharp tip to generate an impulsive force that acts on the PZT film. The impulsive force and the responding voltage are then measured to calculate the piezoelectric constant d33. The impulsive force has large enough amplitude so that a good signal-to-noise ratio can be maintained. Furthermore, the impulsive force has extremely short duration, so the discharge effect (i.e., the time constant effect) of the PZT circuit can be ignored. Preliminary testing on bulk PZT through this new method leads to two conclusions. Firstly, boundary conditions of the specimen are critical. In particular, the specimen must be securely fastened. Since the impulsive load only acts on a tiny area, loose boundary conditions can introduce spurious results from other piezoelectric constant d31. Secondly, size of the specimen is critical. Specimen of smaller size leads to more accurate measurements of the piezoelectric constant d33.

1996 ◽  
Vol 459 ◽  
Author(s):  
Johanna L. Lacey ◽  
Susan Trolier-McKinstry

ABSTRACTLead zirconate titanate thin films offer considerably larger piezoelectric coefficients than do ZnO, and so are attractive for microelectromechanical sensors and actuators. To date, much of the research in this field has concentrated on undoped PZT. In this work, PZT films grown from both hard and soft PZT targets have been deposited on platinum coated silicon wafers by pulsed laser deposition so that the effect of doping on the properties can be determined. Dielectric constants of 1000–1500 are regularly achieved in both types of films, with loss values varying from 0.01 for soft films to 0.03 for hard films. Remanent polarizations are typically 30 μC/cm2 for both types of films with no observable difference in coercive fields. When subjected to ∼140 MPa of biaxial tension and compression, only small (∼5%) reversible changes were observed, indicating a lack of substantial domain reorientation in the films.


2013 ◽  
Vol 135 (1) ◽  
Author(s):  
Qing Guo ◽  
G. Z. Cao ◽  
I. Y. Shen

Lead zirconate titanate (PbZrxTi1-xO3, or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. One major challenge encountered is accurate measurement of piezoelectric coefficients of PZT thin films. In this paper, we present a simple, low-cost, and effective method to measure piezoelectric coefficient d33 of PZT thin films through use of basic principles in mechanics of vibration. A small impact hammer with a tiny tip acts perpendicularly to the PZT thin-film surface to generate an impulsive force. In the meantime, a load cell at the hammer tip measures the impulsive force and a charge amplifier measures the responding charge of the PZT thin film. Then the piezoelectric coefficient d33 is obtained from the measured force and charge based on piezoelectricity and a finite element modeling. We also conduct a thorough parametric study to understand the sensitivity of this method on various parameters, such as substrate material, boundary conditions, specimen size, specimen thickness, thickness ratio, and PZT thin-film material. Two rounds of experiments are conducted to demonstrate the feasibility and accuracy of this new method. The first experiment is to measure d33 of a PZT disk resonator whose d33 is known. Experimental results show that d33 measured via this method is as accurate as that from the manufacturer's specifications within its tolerance. The second experiment is to measure d33 of PZT thin films deposited on silicon substrates. With the measured d33, we predict the displacement of PZT thin-film membrane microactuators. In the meantime, the actuator displacement is measured via a laser Doppler vibrometer. The predicted and measured displacements agree very well validating the accuracy of this new method.


2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.


2003 ◽  
Vol 15 (5) ◽  
pp. 1147-1155 ◽  
Author(s):  
A. Wu ◽  
P. M. Vilarinho ◽  
I. Reaney ◽  
I. M. Miranda Salvado

1994 ◽  
Vol 17 (6) ◽  
pp. 1005-1014 ◽  
Author(s):  
S B Majumder ◽  
V N Kulkarni ◽  
Y N Mohapatra ◽  
D C Agrawal

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