Measurements of Piezoelectric Coefficient d33 of Lead Zirconate Titanate Thin Films Using a Mini Force Hammer

2013 ◽  
Vol 135 (1) ◽  
Author(s):  
Qing Guo ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
New Method ◽  
Impulsive Force ◽  
Pzt Thin Films ◽  
Zirconate Titanate ◽  
Pzt Thin Film

Lead zirconate titanate (PbZrxTi1-xO3, or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. One major challenge encountered is accurate measurement of piezoelectric coefficients of PZT thin films. In this paper, we present a simple, low-cost, and effective method to measure piezoelectric coefficient d33 of PZT thin films through use of basic principles in mechanics of vibration. A small impact hammer with a tiny tip acts perpendicularly to the PZT thin-film surface to generate an impulsive force. In the meantime, a load cell at the hammer tip measures the impulsive force and a charge amplifier measures the responding charge of the PZT thin film. Then the piezoelectric coefficient d33 is obtained from the measured force and charge based on piezoelectricity and a finite element modeling. We also conduct a thorough parametric study to understand the sensitivity of this method on various parameters, such as substrate material, boundary conditions, specimen size, specimen thickness, thickness ratio, and PZT thin-film material. Two rounds of experiments are conducted to demonstrate the feasibility and accuracy of this new method. The first experiment is to measure d33 of a PZT disk resonator whose d33 is known. Experimental results show that d33 measured via this method is as accurate as that from the manufacturer's specifications within its tolerance. The second experiment is to measure d33 of PZT thin films deposited on silicon substrates. With the measured d33, we predict the displacement of PZT thin-film membrane microactuators. In the meantime, the actuator displacement is measured via a laser Doppler vibrometer. The predicted and measured displacements agree very well validating the accuracy of this new method.

Cost-Effective Measurements of Piezoelectric Coefficient d33 of Thin-Film PZT Using a Mini Force Hammer

2011 ◽  
Author(s):  
Qing Guo ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Piezoelectric Coefficient ◽  
New Method ◽  
Specimen Thickness ◽  
Film Material ◽  
Impulsive Force ◽  
Pzt Thin Films ◽  
Aspect Ratios ◽  
Pzt Thin Film

Lead Zirconate Titanate (PbZrxTi1−xO3 or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. One major challenge encountered is accurate measurement of piezoelectric coefficients of PZT thin films. In this paper, we present a simple, low-cost, and effective method to measure piezoelectric coefficient d33 of PZT thin films through use of basic principles in mechanics of vibration. We use a small impact hammer with a tiny tip to generate an impulsive force acting perpendicularly to the surface of a PZT film. In the meantime, we measure the impulsive force via a load cell and the responding charge of the PZT thin film via a charge amplifier. Then the piezoelectric coefficient d33 is obtained from the measured force and charge based on piezoelectricity and a finite element modeling. We also conduct a thorough parametric study to understand the sensitivity of this method on various parameters, such as substrate material, boundary conditions, specimen size, specimen thickness, thickness ratio, and PZT thin-film material. To demonstrate the feasibility, we calibrate the new method via a PZT thick film disk resonator with a known d33. Experimental results show that d33 measured via this method is as accurate as those from the manufacturer’s specifications within its tolerance. We then apply the new method to PZT thin films deposited on silicon substrate, and successfully measure the corresponding piezoelectric coefficient d33.

Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Oxygen Vacancies ◽  
Lead Zirconate ◽  
Electrical Degradation ◽  
Zirconate Titanate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Degradation Properties

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Microstructure of Solution-Processed Lead Zirconate Titanate (PZT) Thin Films

1991 ◽  
Vol 74 (6) ◽  
pp. 1455-1458 ◽  
Author(s):  
Altaf H. Carim ◽  
Bruce A. Tuttle ◽  
Daniel H. Doughty ◽  
Sheri L. Martinez
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Solution Processed ◽  
Pzt Thin Films ◽  
Zirconate Titanate

Effect of Annealing Treatment on PZT Thin Fiilm Properties Using Oxygen 18 Depth Profiling Technique

1998 ◽  
Vol 541 ◽  
Author(s):  
F. Ayguavives ◽  
B. Ea-Kim ◽  
B. Agius ◽  
I. Vickridge ◽  
A. I. Kingon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Plasma Deposition ◽  
Annealing Treatment ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Pzt Thin Films ◽  
Pzt Thin Film ◽  
Metallic Target

AbstractLead zirconate titanate (PZT) thin films have been deposited in a reactive argon/oxygen gas mixture from a metallic target of nominal composition Pb1.1(Zr0.4Ti0.6)O3 by rf magnetron sputtering on Si substrates and RuO2/SiO2/Si structures. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements clearly show a correlation between the evolution of characteristic atomic emission line intensities and the thin film composition determined by simultaneous Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA). As a result, the cathode surface state can be monitored by OES to ensure a good compositional transferability from the target to the film and reproducibility of thin film properties for given values of deposition parameters. Electrical properties and crystallization have been optimized with a 90 nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550°C) are fatigue-free and show very low leakage currents (J=2.10−8 A/cm2 at 1 V). The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using 18O as a tracer, to study the oxygen vacancy migration which plays a key role in fatigue, leakage current, and electrical degradation/breakdown in PZT thin films.

Measurements of Piezoelectric Constant D33 of Lead Zirconate Titanate (PZT) Through Use of a Mini Impact Hammer

2009 ◽  
Author(s):  
Qing Guo ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Films ◽  
Boundary Conditions ◽  
Lead Zirconate Titanate ◽  
Low Cost ◽  
Lead Zirconate ◽  
Piezoelectric Constant ◽  
Impulsive Force ◽  
Sensors And Actuators ◽  
Aspect Ratios ◽  
Zirconate Titanate

Lead Zirconate Titanate Oxide (PbZrxTi1−xO3 or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. This paper is to present a simple and low-cost method to measure piezoelectric constant d33 of PZT thin films, which is a major challenge encountered in the actuator development. We use an impact hammer with a sharp tip to generate an impulsive force that acts on the PZT film. The impulsive force and the responding voltage are then measured to calculate the piezoelectric constant d33. The impulsive force has large enough amplitude so that a good signal-to-noise ratio can be maintained. Furthermore, the impulsive force has extremely short duration, so the discharge effect (i.e., the time constant effect) of the PZT circuit can be ignored. Preliminary testing on bulk PZT through this new method leads to two conclusions. Firstly, boundary conditions of the specimen are critical. In particular, the specimen must be securely fastened. Since the impulsive load only acts on a tiny area, loose boundary conditions can introduce spurious results from other piezoelectric constant d31. Secondly, size of the specimen is critical. Specimen of smaller size leads to more accurate measurements of the piezoelectric constant d33.

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