Quasi-Static and Fatigue Fracture Strength of Microsized Silicon Film Measured by On-Chip Test Method
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Abstract Quasi-static and fatigue tests under uniaxial tensile loading condition were carried out for single-crystal-silicon in a direction of <110> by using on-chip testing method. A film specimen and tensile testing system were integrated on a silicon chip. A measurement system allowing both quasi-static and dynamic loading was newly introduced. In quasi-static loading measured fracture strain of silicon thin-film was 3.4%. Fatigue fractures were observed during 103∼106 cycles when the maximum strains of sinusoidal wave were higher than the average fracture strain of tensile tests.
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1999 ◽
Vol 119
(2)
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pp. 67-72
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Anisotropy in fracture of single crystal silicon film characterized under uniaxial tensile condition
2005 ◽
Vol 117
(1)
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pp. 143-150
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2012 ◽
Vol 602-604
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pp. 1457-1460
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1998 ◽
Vol 166
(2)
◽
pp. 715-728
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