Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga[sub 0.51]In[sub 0.49]P/In[sub 0.15]Ga[sub 0.85]As/Ga[sub 0.51]In[sub 0.49]P pseudomorphic high electron mobility transistors

High Electron ◽

High Electron Mobility ◽

Sidewall Effects

Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

Current Applied Physics ◽

10.1016/j.cap.2013.04.003 ◽

2013 ◽

Vol 13 (7) ◽

pp. 1359-1364 ◽

Cited By ~ 4

Author(s):

H. Mosbahi ◽

M. Gassoumi ◽

Imen Saidi ◽

Houcine Mejri ◽

C. Gaquière ◽

...

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Radio Frequency Characteristics of Multifinger 0.1 µm Metamorphic High-Electron-Mobility Transistors Depending on Number of Gate Fingers and Gate Width

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.6503 ◽

2007 ◽

Vol 46 (10A) ◽

pp. 6503-6508 ◽

Cited By ~ 2

Author(s):

Jung-Hun Oh ◽

Min Han ◽

Sung-Woon Moon ◽

Seok-Gyu Choi ◽

Yong-Hyun Baek ◽

...

Keyword(s):

Radio Frequency ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Gate Width ◽

Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

Applied Physics Letters ◽

10.1063/1.2162092 ◽

2006 ◽

Vol 88 (2) ◽

pp. 023502 ◽

Cited By ~ 8

Author(s):

S. Arulkumaran ◽

G. I. Ng ◽

C. L. Tan ◽

Z. H. Liu ◽

J. Bu ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

High Electron ◽

Furnace Annealing ◽

High Electron Mobility ◽

Microwave Characteristics

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Applied Physics Letters ◽

10.1063/1.4921848 ◽

2015 ◽

Vol 106 (21) ◽

pp. 213502 ◽

Cited By ~ 11

Author(s):

Tommaso Brazzini ◽

Michael A. Casbon ◽

Huarui Sun ◽

Michael J. Uren ◽

Jonathan Lees ◽

...

Keyword(s):

Radio Frequency ◽

Electron Mobility ◽

Hot Electrons ◽

High Electron ◽

High Electron Mobility ◽

Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/2/029501 ◽

2012 ◽

Vol 28 (2) ◽

pp. 029501 ◽

Cited By ~ 1

Author(s):

M Lachab ◽

M Sultana ◽

H Fatima ◽

V Adivarahan ◽

Q Fareed ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron ◽

High Electron Mobility ◽

Current Collapse

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures

10.1109/iciprm.2004.1442711 ◽

2005 ◽

Author(s):

H. Ono ◽

S. Taniguchi ◽

T. Suzuki

Keyword(s):

High Temperatures ◽

Electron Mobility ◽

High Frequency ◽

Electron Velocity ◽

High Electron ◽

High Electron Mobility ◽

Side-gate effects on the direct current and radio frequency characteristics of AlGaN/GaN high-electron-mobility transistor on Si

Applied Physics Letters ◽

10.1063/1.3655350 ◽

2011 ◽

Vol 99 (16) ◽

pp. 163505 ◽

Cited By ~ 1

Author(s):

Hong Zhou ◽

Geok Ing Ng ◽

Zhi Hong Liu ◽

Subramaniam Arulkumaran

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/24/10/079 ◽

2007 ◽

Vol 24 (10) ◽

pp. 2998-3001 ◽

Cited By ~ 2

Author(s):

Li Miao ◽

Wang Yan

Keyword(s):

Direct Current ◽

Electron Mobility ◽

Current Model ◽

Alternating Current ◽

High Electron ◽

High Electron Mobility ◽

Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.111001 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 111001 ◽

Cited By ~ 33

Author(s):

Subramaniam Arulkumaran ◽

Geok Ing Ng ◽

Sahmuganathan Vicknesh ◽

Hong Wang ◽

Kian Siong Ang ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Microwave Characteristics

The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Chinese Physics B ◽

10.1088/1674-1056/22/2/027201 ◽

2013 ◽

Vol 22 (2) ◽

pp. 027201 ◽

Cited By ~ 6

Author(s):

Lei Shi ◽

Shi-Wei Feng ◽

Chun-Sheng Guo ◽

Hui Zhu ◽

Ning Wan

Keyword(s):

Direct Current ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Step Voltage ◽

Voltage Stress