Radio Frequency Characteristics of Multifinger 0.1 µm Metamorphic High-Electron-Mobility Transistors Depending on Number of Gate Fingers and Gate Width

High Electron ◽

High Electron Mobility ◽

Gate Width ◽

Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

Current Applied Physics ◽

10.1016/j.cap.2013.04.003 ◽

2013 ◽

Vol 13 (7) ◽

pp. 1359-1364 ◽

Cited By ~ 4

Author(s):

H. Mosbahi ◽

M. Gassoumi ◽

Imen Saidi ◽

Houcine Mejri ◽

C. Gaquière ◽

...

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga[sub 0.51]In[sub 0.49]P/In[sub 0.15]Ga[sub 0.85]As/Ga[sub 0.51]In[sub 0.49]P pseudomorphic high electron mobility transistors

10.1116/1.1322047 ◽

2000 ◽

Vol 18 (6) ◽

pp. 2615 ◽

Cited By ~ 1

Author(s):

Chih-Hung Yen ◽

Kuan-Po Lin ◽

Kuo-Hui Yu ◽

Wen-Lung Chang ◽

Kun-Wei Lin ◽

...

Keyword(s):

Radio Frequency ◽

Direct Current ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Sidewall Effects

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

10.1063/1.4921848 ◽

2015 ◽

Vol 106 (21) ◽

pp. 213502 ◽

Cited By ~ 11

Author(s):

Tommaso Brazzini ◽

Michael A. Casbon ◽

Huarui Sun ◽

Michael J. Uren ◽

Jonathan Lees ◽

...

Keyword(s):

Radio Frequency ◽

Electron Mobility ◽

Hot Electrons ◽

High Electron ◽

High Electron Mobility ◽

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. ◽

High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures

10.1109/iciprm.2004.1442711 ◽

2005 ◽

Author(s):

H. Ono ◽

S. Taniguchi ◽

T. Suzuki

Keyword(s):

High Temperatures ◽

Electron Mobility ◽

High Frequency ◽

Electron Velocity ◽

High Electron ◽

High Electron Mobility ◽

Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2016.2598168 ◽

2016 ◽

Vol 64 (10) ◽

pp. 3139-3150 ◽

Cited By ~ 9

Author(s):

Giuseppe Moschetti ◽

Fabian Thome ◽

Matthias Ohlrogge ◽

Jens Goliasch ◽

Frank Schafer ◽

...

Keyword(s):

Electron Mobility ◽

Cryogenic Temperature ◽

High Electron ◽

High Electron Mobility ◽

Gate Width ◽

Stability Investigation ◽

Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors

10.1063/1.4991665 ◽

2017 ◽

Vol 111 (1) ◽

pp. 013506 ◽

Cited By ~ 8

Author(s):

Alvaro D. Latorre-Rey ◽

Flavio F. M. Sabatti ◽

John D. Albrecht ◽

Marco Saraniti

Keyword(s):

Radio Frequency ◽

Electron Mobility ◽

High Electron ◽

Hot Electron ◽

Large Signal ◽

High Electron Mobility ◽

Electron Generation ◽

Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy

10.1063/1.1582373 ◽

2003 ◽

Vol 82 (24) ◽

pp. 4361-4363 ◽

Cited By ~ 47

Author(s):

Oleg Mitrofanov ◽

Michael Manfra ◽

Nils Weimann

Keyword(s):

Molecular Beam Epitaxy ◽

Radio Frequency ◽

Electron Mobility ◽

Molecular Beam ◽

Frequency Dispersion ◽

High Electron ◽

High Electron Mobility ◽

Si Doping ◽

Sub-30-nm In₀.8Ga₀.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3045958 ◽

2021 ◽

pp. 1-7

Author(s):

Hyeon-Bhin Jo ◽

Seung-Won Yun ◽

Jun-Gyu Kim ◽

Ji-Min Baek ◽

In-Geun Lee ◽

...

Keyword(s):

Electron Mobility ◽

High Frequency ◽

High Electron ◽

High Electron Mobility ◽

Composite Channel ◽

Erratum: “Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors” [Appl. Phys. Lett. 111, 013506 (2017)]

10.1063/1.5003410 ◽

2017 ◽

Vol 111 (12) ◽

pp. 129901

Author(s):

Alvaro D. Latorre-Rey ◽

Flavio F. M. Sabatti ◽

John D. Albrecht ◽

Marco Saraniti

Keyword(s):

Radio Frequency ◽

Electron Mobility ◽

High Electron ◽

Hot Electron ◽

Large Signal ◽

High Electron Mobility ◽

Electron Generation ◽

Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1463080 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1048-1051 ◽

Cited By ~ 1

Author(s):

Cheng-Kuo Lin ◽

Yi-Jen Chan

Keyword(s):

Radio Frequency ◽

Nonlinear Model ◽

Electron Mobility ◽

High Electron ◽

Power Prediction ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Extended Radio