Erratum: “Effect of imprinting pressure on residual layer thickness in UV nano-imprint lithography” [J. Vac. Sci. Technol. B 23, 1102 (2005)]

2005 ◽  
Vol 23 (5) ◽  
pp. 2176
Author(s):  
Heon Lee
Keyword(s):  
Layer Thickness ◽  
Residual Layer ◽  
Imprint Lithography ◽  
Nano Imprint

A method for in situ measurement of residual layer thickness in nano-imprint lithography

2013 ◽  
Vol 110 ◽  
pp. 132-140 ◽  
Author(s):  
Wei-Hsuan Hsu ◽  
Hong Hocheng ◽  
Jow-Tsong Shy
Keyword(s):  
Layer Thickness ◽  
Residual Layer ◽  
In Situ Measurement ◽  
Imprint Lithography ◽  
Nano Imprint

Residual layer thickness control and metrology in jet and flash imprint lithography

2012 ◽  
Author(s):  
Shrawan Singhal ◽  
Ravikiran Attota ◽  
S. V. Sreenivasan
Keyword(s):  
Layer Thickness ◽  
Residual Layer ◽  
Imprint Lithography ◽  
Thickness Control

scholarly journals Removal of Polymer for Nano-imprint Lithography using Atomic Hydrogen Generated by the Hot-wire Catalyzer

2011 ◽  
Vol 24 (4) ◽  
pp. 383-388 ◽  
Author(s):  
Akihiko Kono ◽  
Takashi Maruoka ◽  
Arai Yu ◽  
Yoshihiko Hirai ◽  
Hideo Horibe
Keyword(s):  
Atomic Hydrogen ◽  
Imprint Lithography ◽  
Hot Wire ◽  
Nano Imprint

Submicron Patterned Anodic Oxidation of Aluminum Thin Films

2000 ◽  
Vol 636 ◽  
Author(s):  
Qiyu Huang ◽  
Whye-Kei Lye ◽  
David M. Longo ◽  
Michael L. Reed
Keyword(s):  
Thin Films ◽  
Anodic Oxidation ◽  
Ion Beam ◽  
Electrochemical Anodization ◽  
Optical Methods ◽  
Imprint Lithography ◽  
Aluminum Films ◽  
Aspect Ratios ◽  
Potential Applications ◽  
Nano Imprint

AbstractAlumina formed by the electrochemical anodization of bulk aluminum has a regular porous structure [1]. Sub-100 nm pores with aspect ratios as high as 1000:1 can easily be formed [2] without elaborate processing. Anodization of aluminum thus provides the basis for the inexpensive, high throughput microfabrication of structures with near vertical sidewalls [2]. In this work we explore the patterned anodic oxidation of deposited aluminum thin films, facilitating the integration of this technique with established microfabrication tools. An anodization barrier of polymethylmethacrylate (PMMA) is deposited onto 300 nm thick aluminum films. The barrier film is subsequently patterned and the exposed aluminum anodized in a 10% sulfuric acid solution. Barrier patterning techniques utilized in this study include optical exposure, ion-beam milling and nano-imprint lithography. Sharp edge definition on micron scale patterns has been achieved using optical methods. Extension of this technique to smaller dimensions by ion-beam milling and nano-imprint lithography is presented. We further report on the observation of contrast reversal of anodization with very thin PMMA barriers, which provides a novel means of pattern transfer. Potential applications and challenges will be discussed.

Resist behaviour during peeling release in nano-imprint lithography

2016 ◽  
Author(s):  
Florian Chalvin ◽  
Naoto Nakamura ◽  
Takamitsu Tochino ◽  
Masaaki Yasuda ◽  
Hiroaki Kawata ◽  
...  
Keyword(s):  
Imprint Lithography ◽  
Nano Imprint

Electrical nano-imprint lithography

2012 ◽  
Vol 23 (25) ◽  
pp. 255302 ◽  
Author(s):  
L Ressier ◽  
E Palleau ◽  
S Behar
Keyword(s):  
Imprint Lithography ◽  
Nano Imprint
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