Submicron Patterned Anodic Oxidation of Aluminum Thin Films

2000 ◽  
Vol 636 ◽  
Author(s):  
Qiyu Huang ◽  
Whye-Kei Lye ◽  
David M. Longo ◽  
Michael L. Reed

AbstractAlumina formed by the electrochemical anodization of bulk aluminum has a regular porous structure [1]. Sub-100 nm pores with aspect ratios as high as 1000:1 can easily be formed [2] without elaborate processing. Anodization of aluminum thus provides the basis for the inexpensive, high throughput microfabrication of structures with near vertical sidewalls [2]. In this work we explore the patterned anodic oxidation of deposited aluminum thin films, facilitating the integration of this technique with established microfabrication tools. An anodization barrier of polymethylmethacrylate (PMMA) is deposited onto 300 nm thick aluminum films. The barrier film is subsequently patterned and the exposed aluminum anodized in a 10% sulfuric acid solution. Barrier patterning techniques utilized in this study include optical exposure, ion-beam milling and nano-imprint lithography. Sharp edge definition on micron scale patterns has been achieved using optical methods. Extension of this technique to smaller dimensions by ion-beam milling and nano-imprint lithography is presented. We further report on the observation of contrast reversal of anodization with very thin PMMA barriers, which provides a novel means of pattern transfer. Potential applications and challenges will be discussed.

Author(s):  
L.J. Chen ◽  
T.T. Chang ◽  
C.Y. Hou ◽  
J.W. Mayer

Ion implantation metallurgy has received increasing attention because of its important applications in the modification of surface composition and structure of materials. Relatively low dose ion beam material modification can be achieved by ion-beam induced atomic mixing between thin film and its substrate. Ion beam mixing of metal thin films on silicon is by far the most widely studied system for its potential applications in VLSI technology. In this paper, we report the results of ion beam induced phase transitions in nickel and cobalt thin films on silicon.


2013 ◽  
Vol 1 (27) ◽  
pp. 7870 ◽  
Author(s):  
Martin A. Niedermeier ◽  
Gregory Tainter ◽  
Benedikt Weiler ◽  
Paolo Lugli ◽  
Peter Müller-Buschbaum

2002 ◽  
Vol 739 ◽  
Author(s):  
Richard M. Langford ◽  
Shamus O'Reilly ◽  
Iain J. McEwen

ABSTRACTNano-imprint lithography (NIL) and micro-contact printing (MCP) are currently receiving considerable attention as techniques that can be used for low cost nanolithography. Here the application of a focused ion beam (FIB) system for the analysis of the elastomer stamps and imprinted patterns which are used in these nanolithography techniques is discussed. It is shown that the ‘lift-out’ technique can be used to prepare cross-sections of both the elastomer poly(dimethylsiloxane) (PDMS) stamps and the imprinted poly(methylmethacrylate) (PMMA) patterns. In addition, the use of the FIB system to prepare masters such as gratings and structures with curved shapes that would be difficult to fabricate using conventional processing techniques is discussed.


Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.


Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.


1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.


1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO

2016 ◽  
Vol 7 (3) ◽  
pp. 172-179 ◽  
Author(s):  
B. A. Gurovich ◽  
K. E. Prikhodko ◽  
M. A. Tarkhov ◽  
A. G. Domantovsky ◽  
D. A. Komarov ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 114
Author(s):  
Chang Lu ◽  
Qingjian Lu ◽  
Min Gao ◽  
Yuan Lin

The reversible and multi-stimuli responsive insulator-metal transition of VO2, which enables dynamic modulation over the terahertz (THz) regime, has attracted plenty of attention for its potential applications in versatile active THz devices. Moreover, the investigation into the growth mechanism of VO2 films has led to improved film processing, more capable modulation and enhanced device compatibility into diverse THz applications. THz devices with VO2 as the key components exhibit remarkable response to external stimuli, which is not only applicable in THz modulators but also in rewritable optical memories by virtue of the intrinsic hysteresis behaviour of VO2. Depending on the predesigned device structure, the insulator-metal transition (IMT) of VO2 component can be controlled through thermal, electrical or optical methods. Recent research has paid special attention to the ultrafast modulation phenomenon observed in the photoinduced IMT, enabled by an intense femtosecond laser (fs laser) which supports “quasi-simultaneous” IMT within 1 ps. This progress report reviews the current state of the field, focusing on the material nature that gives rise to the modulation-allowed IMT for THz applications. An overview is presented of numerous IMT stimuli approaches with special emphasis on the underlying physical mechanisms. Subsequently, active manipulation of THz waves through pure VO2 film and VO2 hybrid metamaterials is surveyed, highlighting that VO2 can provide active modulation for a wide variety of applications. Finally, the common characteristics and future development directions of VO2-based tuneable THz devices are discussed.


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