Reversing the hydrogen silsesquioxane image by silicon nitride and silicon oxide chemical mechanical polishing

Studies on chemical mechanical polishing (CMP) for silicon nitride (Si3N4) balls with CeO2 abrasive carried to investigate the mechanism of chemo-mechanical action between silicon nitride and CeO2. It is found that CeO2 is more effective to obtain smooth Si3N4 balls than other abrasives, and extremely smooth Si3N4 balls with surface Ra 4nm were obtained after polishing. XRD test is used to detect the reaction resultants on the ball surface, and the results show that SiO2 is the main resultant of the chemical reaction between Si3N4 and CeO2, and the test results confirm the correctness of thermodynamic analysis based on Gibb’s free energy of formation. It is also found that water play as a key factor in CMP.

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Silicon Nitride Chemical Mechanical Polishing Mechanisms

Journal of The Electrochemical Society ◽

10.1149/1.1838893 ◽

1998 ◽

Vol 145 (11) ◽

pp. 3919-3925 ◽

Cited By ~ 42

Author(s):

Y. Z. Hu ◽

R. J. Gutmann ◽

T. P. Chow

Keyword(s):

Silicon Nitride ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing

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Application of chemical-mechanical polishing for planarizing of silicon nitride passivation layers used in high power III-V laser devices

Crystal Research and Technology ◽

10.1002/crat.200510552 ◽

2006 ◽

Vol 41 (2) ◽

pp. 180-185

Author(s):

Jiang Wei

Keyword(s):

Silicon Nitride ◽

High Power ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Passivation Layers ◽

Laser Devices

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Colloidal Silica based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry

MRS Proceedings ◽

10.1557/proc-867-w8.5 ◽

2005 ◽

Vol 867 ◽

Cited By ~ 2

Author(s):

Kyoung-Ho Bu ◽

Brij M. Moudgil

Keyword(s):

Silicon Nitride ◽

Chemical Mechanical Polishing ◽

Colloidal Silica ◽

Sodium Dodecyl ◽

Mechanical Polishing ◽

Wafer Surface ◽

Shallow Trench Isolation ◽

Pattern Size ◽

Trench Isolation ◽

Silica Slurry

AbstractAmong various properties of chemical mechanical polishing (CMP) slurry, selectivity plays a key role in global planarization of high density and small pattern size shallow trench isolation (STI) process. Lack of adequate selectivity can lead to defects such as dishing and erosion. To improve the selectivity of STI CMP process, CMP characteristics of silica and silicon nitride wafer were investigated using colloidal silica slurry as a function of slurry pH. Sodium dodecyl sulfate (SDS), an anionic surfactant, was added to increase the selectivity of the slurry. As a result, selectivity increased from 3 to 25. It was concluded that selective passivation layer formed on silicon nitride wafer surface at acidic slurry pH range was responsible for the observed selectivity increase. Adsorption characteristics of SDS on silica and silicon nitride were measured as a function of slurry pH and concentration of SDS. As indicated by zeta potential behavior under acidic pH conditions, SDS adsorption on silicon nitride was significantly higher han silica due to the electrostatic forces. Significantly higher SDS coating on silicone nitride seems to have resulted in lubrication layer leading to increased polishing selectivity.

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Research on Chemical Mechanical Polishing for Silicon Nitride Ceramics

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.375-376.283 ◽

2008 ◽

Vol 375-376 ◽

pp. 283-287

Author(s):

Cong Rong Zhu ◽

Ju Long Yuan ◽

Qin Xu ◽

Bing Hai Lv

Keyword(s):

Silicon Nitride ◽

Chemical Mechanical Polishing ◽

Research Result ◽

Surface Profile ◽

Mechanical Polishing ◽

Machining Process ◽

Good Thermal Stability ◽

Nitride Ceramics ◽

Ultra Precision ◽

Small Density

Silicon nitride ceramics materials have excellent properties such as small density, high rigidity, high Young's modulus, high wearability, good thermal stability and chemical stability, which make it become one of the most appropriate materials for rollers of high precision bearing. Chemical Mechanical Polishing (CMP) technology is employed to have an ultra-precision machining process for silicon nitride ceramics materials workpiece and the effects of workpiece surface roughness in different abrasive are discussed in this research. The XRD and SEM technology are used to take phase analysis and surface profile detection for the finishing workpiece polished with CeO2 abrasive. The chemical reaction mechanism and the material remove mechanism of silicon nitride ceramics materials in CMP process with CeO2 abrasive are both analysed and discussed in this paper. The research result shows that an extremely smooth surface of silicon nitride ceramics materials workpiece with roughness 5nm Ra is obtained after CMP process with polyurethane polishing pad and CeO2 abrasive.

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