Novel Polymeric Surfactants for Improving Chemical Mechanical Polishing Performance of Silicon Oxide

AbstractIt is very important to select superior interlayer Pre Metal Dielectric (PMD) materials which can act as a penetration barrier to various impurities created by the Chemical Mechanical Polishing (CMP) processes. In this paper, hot carrier degradation and device characteristics were investigated with material variation of PMD-1 layers, which were split by LP-TEOS, SR-oxide, PE-oxynitride, PE-nitride and PE-TEOS films. It was observed that the PE-oxynitride and PEnitride using plasma was greatly deteriorated in hot carrier effect in comparison with silicon oxide. Consequently, it is clearly shown that silicon oxide turned out to be a better PMD-1 material than both PE-oxynitride and PE-nitride. From the results, it is suggested that LP-TEOS film is the best PMD-1 material among the silicon oxide samples.

Download Full-text

A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO2 Slurry

MRS Proceedings ◽

10.1557/proc-671-m5.3 ◽

2001 ◽

Vol 671 ◽

Cited By ~ 8

Author(s):

Jong Won Lee ◽

Bo Un Yoon ◽

Sangrok Hah ◽

Joo Tae Moon

Keyword(s):

High Pressure ◽

Chemical Mechanical Polishing ◽

Silicon Oxide ◽

Removal Rate ◽

Mechanical Polishing ◽

High Area ◽

Trench Area

ABSTRACTThis paper attempts to establish planarization model in chemical mechanical polishing of silicon oxide using high selective ceria slurry. Though removal rate of the high area is increased due to a high pressure focused on the area with abrasive and pad, the removal rate of the same area is not increased but decreased even in the very beginning of polishing with ceria slurry. It also observed that only the elevated area is polished and dishing is not occurred during the polishing in high selective ceria CMP. In this work, it is proposed that ceria abrasives are filled in the low trench area and then support the pad as well as high area during the CMP, which results in planarization without dishing.

Download Full-text

High-quality conformal silicon oxide films prepared by multi-step sputtering PECVD and chemical mechanical polishing

Journal of Electronic Materials ◽

10.1007/s11664-998-0080-9 ◽

1998 ◽

Vol 27 (11) ◽

pp. 1262-1267 ◽

Cited By ~ 7

Author(s):

Min Park ◽

Hyun Kyu Yu ◽

Jin Gun Koo ◽

Jin Jang ◽

Kee Soo Nam

Keyword(s):

Chemical Mechanical Polishing ◽

Silicon Oxide ◽

Oxide Films ◽

Mechanical Polishing ◽

High Quality

Download Full-text

Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical–mechanical polishing (CMP) process with pattern geometry of concentric groove pads

Wear ◽

10.1016/j.wear.2010.10.057 ◽

2011 ◽

Vol 270 (3-4) ◽

pp. 172-180 ◽

Cited By ~ 8

Author(s):

Chin-Chung Wei ◽

Jeng-Haur Horng ◽

An-Chen Lee ◽

Jen-Fin Lin

Keyword(s):

Oxide Film ◽

Chemical Mechanical Polishing ◽

Silicon Oxide ◽

Mechanical Polishing ◽

Experimental Confirmation ◽

Silicon Oxide Film

Download Full-text

Modeling of chemical mechanical polishing at multiple scales

10.31274/rtd-180813-13199 ◽

2002 ◽

Cited By ~ 1

Author(s):

Guanghui Fu

Keyword(s):

Chemical Mechanical Polishing ◽

Multiple Scales ◽

Mechanical Polishing

Download Full-text

Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

Applied Sciences ◽

10.3390/app11104358 ◽

2021 ◽

Vol 11 (10) ◽

pp. 4358

Author(s):

Hanchul Cho ◽

Taekyung Lee ◽

Doyeon Kim ◽

Hyoungjae Kim

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Shape Error ◽

Profile Shape ◽

Conditioning Process ◽

Polishing Pad ◽

Simulation Based ◽

Diamond Conditioner ◽

Pad Conditioning ◽

Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

Download Full-text