Two stage ion beam figuring and smoothening method for shape error correction of ULE® substrates of extreme ultraviolet lithography projection optics: Evaluation of high-spatial frequency roughness

Author(s):  
Kazuma Kamijo ◽  
Ryou Uozumi ◽  
Kenta Moriziri ◽  
S. A. Pahlovy ◽  
Iwao Miyamoto
2016 ◽  
Vol 852 ◽  
pp. 283-292
Author(s):  
Zheng Hang Xin ◽  
Chong Wang ◽  
Feng Qiu ◽  
Rong Fei Wang ◽  
Chen Li ◽  
...  

The recent process in the fabrication of the ordered Ge/Si quantum dots (QDs) is reviewed. The fabrication step generally started on the preparation of patterned substrate prepared in advance by using several interesting methods, such as photo lithography, focus ion beam (FIB), reactive ion etching (RIE), and extreme ultraviolet lithography (EUV-IL) et al, which are introduced briefly in this article. Here, we’d like to focus on the detailed process of nanosphere lithography (NSL) which has the advantages of less cost and higher product compared with the referred methods. The ordered Ge nanostructures always show as Hexagonal close-packed array on the patterned Si substrate and have the advantages of potential applications in electronic and optoelectronic devices.


2007 ◽  
Vol 46 (9B) ◽  
pp. 6155-6160 ◽  
Author(s):  
Yukinobu Kakutani ◽  
Masahito Niibe ◽  
Yoshio Gomei ◽  
Hiromitsu Takase ◽  
Shigeru Terashima ◽  
...  

1999 ◽  
Author(s):  
Claude Montcalm ◽  
Eberhard A. Spiller ◽  
Marco Wedowski ◽  
Eric M. Gullikson ◽  
James A. Folta

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