Discrepancies in the nature of nitrogen incorporation in dilute-nitride GaSbN and GaAsN films

2013 ◽  
Vol 31 (5) ◽  
pp. 051206 ◽  
Author(s):  
Wendy L. Sarney ◽  
Stefan P. Svensson
Keyword(s):  
Dilute Nitride ◽  
Nitrogen Incorporation

The microstructural influence of nitrogen incorporation in dilute nitride semiconductors

2004 ◽  
Vol 16 (31) ◽  
pp. S3161-S3170 ◽  
Author(s):  
P R Chalker ◽  
T J Bullough ◽  
M Gass ◽  
S Thomas ◽  
T B Joyce
Keyword(s):  
Dilute Nitride ◽  
Nitride Semiconductors ◽  
Nitrogen Incorporation ◽  
Dilute Nitride Semiconductors

scholarly journals Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys

2020 ◽  
Vol 814 ◽  
pp. 152233
Author(s):  
M.A.G. Balanta ◽  
P.B.A. de Oliveira ◽  
H. Albalawi ◽  
Y. Galvão Gobato ◽  
H.V.A. Galeti ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Dilute Nitride ◽  
Nitrogen Incorporation ◽  
Spin Properties ◽  
Nitride Alloys

Development of dilute nitride materials for mid-infrared diode lasers

2012 ◽  
Vol 27 (9) ◽  
pp. 094009 ◽  
Author(s):  
A Krier ◽  
M de la Mare ◽  
P J Carrington ◽  
M Thompson ◽  
Q Zhuang ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Dilute Nitride ◽  
Mid Infrared

Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy

2006 ◽  
Vol 89 (3) ◽  
pp. 031907 ◽  
Author(s):  
Q. X. Zhao ◽  
S. M. Wang ◽  
M. Sadeghi ◽  
A. Larsson ◽  
M. Friesel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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