Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.59 ◽

2011 ◽

Vol 679-680 ◽

pp. 59-62 ◽

Cited By ~ 7

Author(s):

Stefano Leone ◽

Yuan Chih Lin ◽

Franziska Christine Beyer ◽

Sven Andersson ◽

Henrik Pedersen ◽

...

Keyword(s):

Epitaxial Growth ◽

Doping Concentration ◽

Epitaxial Layers ◽

Power Devices ◽

High Quality ◽

Homoepitaxial Growth ◽

Basal Plane Dislocation ◽

Background Doping ◽

Quality Material

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

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Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.881 ◽

2007 ◽

Vol 556-557 ◽

pp. 881-884 ◽

Cited By ~ 7

Author(s):

Chiharu Ota ◽

Johji Nishio ◽

Tetsuo Hatakeyama ◽

Takashi Shinohe ◽

Kazutoshi Kojima ◽

...

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Figure Of Merit ◽

Device Simulation ◽

Schottky Barrier Diodes ◽

World Record ◽

Device Structure ◽

The World ◽

Fabrication And Characterization

The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57m*cm2. The world record of Bariga’s Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd 2/Ron was improved to 11,354MW/cm2.

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Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.93 ◽

2009 ◽

Vol 615-617 ◽

pp. 93-96 ◽

Cited By ~ 6

Author(s):

Stefano Leone ◽

Henrik Pedersen ◽

Anne Henry ◽

Shailaja P. Rao ◽

Olof Kordina ◽

...

Keyword(s):

Growth Rate ◽

Epitaxial Growth ◽

Process Parameters ◽

Doping Concentration ◽

Growth Conditions ◽

Main Process ◽

Growth Mechanisms ◽

Homoepitaxial Growth ◽

Background Doping ◽

Homoepitaxial Layers

Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this study, the main process parameters, such as temperature, Cl/Si ratio, C/Si ratio, Si/H2 ratio and ramp up conditions, were studied in detail to understand their effects on the growth mechanisms. Two different optimal epitaxial growth conditions were found. Silicon rich conditions and a high Cl/Si ratio were the key parameters to grow thick homoepitaxial layers with a very low background doping concentration and a growth rate higher than 20 μm/h.

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Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes

Micromachines ◽

10.3390/mi11060598 ◽

2020 ◽

Vol 11 (6) ◽

pp. 598

Author(s):

Min-Woo Ha ◽

Ogyun Seok ◽

Hojun Lee ◽

Hyun Ho Lee

Keyword(s):

Schottky Barrier ◽

Breakdown Voltage ◽

Doping Concentration ◽

Voltage Drop ◽

Mobility Model ◽

Mobility Models ◽

Schottky Barrier Diodes ◽

Forward Voltage ◽

Forward Voltage Drop ◽

P Type

Compared with silicon and silicon carbide, diamond has superior material parameters and is therefore suitable for power switching devices. Numerical simulation is important for predicting the electric characteristics of diamond devices before fabrication. Here, we present numerical simulations of p-type diamond pseudo-vertical Schottky barrier diodes using various mobility models. The constant mobility model, based on the parameter μconst, fixed the hole mobility absolutely. The analytic mobility model resulted in temperature- and doping concentration-dependent mobility. An improved model, the Lombard concentration, voltage, and temperature (CVT) mobility model, considered electric field-dependent mobility in addition to temperature and doping concentration. The forward voltage drop at 100 A/cm2 using the analytic and Lombard CVT mobility models was 2.86 and 5.17 V at 300 K, respectively. Finally, we used an empirical mobility model based on experimental results from the literature. We also compared the forward voltage drop and breakdown voltage of the devices, according to variations in p- drift layer thickness and cathode length. The device successfully achieved a low specific on-resistance of 6.8 mΩ∙cm2, a high breakdown voltage of 1190 V, and a high figure-of-merit of 210 MW/cm2.

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