Corrigendum to “Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys” [J. Alloy. Comp. 814 (2020) 152233]

2020 ◽  
Vol 817 ◽  
pp. 152644
Author(s):  
M.A.G. Balanta ◽  
P.B.A. de Oliveira ◽  
H. Albalawi ◽  
Y. Galvão Gobato ◽  
H.V.A. Galeti ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Dilute Nitride ◽  
Alloy Comp ◽  
Nitrogen Incorporation ◽  
Spin Properties ◽  
Nitride Alloys

scholarly journals Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys

2020 ◽  
Vol 814 ◽  
pp. 152233
Author(s):  
M.A.G. Balanta ◽  
P.B.A. de Oliveira ◽  
H. Albalawi ◽  
Y. Galvão Gobato ◽  
H.V.A. Galeti ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Dilute Nitride ◽  
Nitrogen Incorporation ◽  
Spin Properties ◽  
Nitride Alloys

Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing

2022 ◽  
Author(s):  
Kesuke YAMANE ◽  
Ryo Futamura ◽  
Shigeto Genjo ◽  
Daiki Hamamoto ◽  
Yuito Maki ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Irradiation ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Structural Defects ◽  
Irradiation Damage ◽  
Dilute Nitride ◽  
Positive Effects ◽  
Nitride Alloys

Abstract This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-based dilute nitride alloys. It is found that proton/electron irradiation followed by rapid thermal annealing enhances the PL peak intensity of GaPN alloys, whereas major photovoltaic III-V materials such as GaAs and InGaP degrade their crystal quality by irradiation damage. Atomic force microscopy and transmission electron microscopy reveal no degradation of structural defects. GaAsPN solar cell test devices are then fabricated. Results show that the conversion efficiency increases by proton/electron irradiation, which is mainly caused by an increase in the short-circuit current.

The microstructural influence of nitrogen incorporation in dilute nitride semiconductors

2004 ◽  
Vol 16 (31) ◽  
pp. S3161-S3170 ◽  
Author(s):  
P R Chalker ◽  
T J Bullough ◽  
M Gass ◽  
S Thomas ◽  
T B Joyce
Keyword(s):  
Dilute Nitride ◽  
Nitride Semiconductors ◽  
Nitrogen Incorporation ◽  
Dilute Nitride Semiconductors

Composition variation in Al-based dilute nitride alloys using apertureless scanning near-field optical microscopy

2016 ◽  
Vol 18 (44) ◽  
pp. 30546-30553 ◽  
Author(s):  
G. Kolhatkar ◽  
A. Boucherif ◽  
C. Dab ◽  
S. Fafard ◽  
V. Aimez ◽  
...  
Keyword(s):  
Refractive Index ◽  
Phase Separation ◽  
Optical Microscopy ◽  
Near Field ◽  
Dilute Nitride ◽  
Composition Variation ◽  
Nitride Alloys

Using apertureless scanning near-field optical microscopy to map refractive index variations, we study the phase separation in AlGaNAs alloys.

Evidence of a New Hydrogen Complex in Dilute Nitride Alloys

2007 ◽  
Author(s):  
G. Bisognin ◽  
D. De Salvador ◽  
E. Napolitani ◽  
M. Berti ◽  
A. Polimeni ◽  
...  
Keyword(s):  
Dilute Nitride ◽  
Nitride Alloys
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