Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

Author(s):  
Wan Sik Hwang ◽  
Kristof Tahy ◽  
Pei Zhao ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
...  
2017 ◽  
Vol 5 (5) ◽  
pp. 1165-1178 ◽  
Author(s):  
Yi Zhou ◽  
Yifan Li ◽  
Jie Li ◽  
Jichen Dong ◽  
Hui Li

Long, stable, and free-standing linear atomic carbon chains and boron nitride (BN) chains have been carved out from their 2D sheets recently [Meyer et al., Nature, 2008, 454(7202), 319; Jin et al. Phys. Rev. Lett., 2009, 102(20), 205501; Cretu et al., ACS Nano, 2014, 8(12), 11950], which could be used as transport channels or on-chip interconnects for field-effect transistors.


2014 ◽  
Vol 95 ◽  
pp. 84-88 ◽  
Author(s):  
Guo-xun Wu ◽  
Chenliang Li ◽  
Yu-hang Jing ◽  
Chao-ying Wang ◽  
Yong Yang ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (117) ◽  
pp. 96455-96463 ◽  
Author(s):  
Dan Zhang ◽  
Mengqiu Long ◽  
Xiaojiao Zhang ◽  
Hui Xu

Using the nonequilibrium Green’s function method combined with spin-polarized DFT, we investigate the spin-resolved electronic transport properties of devices made of poly-(terphenylene-butadiynylene) (PTB) between zigzag graphene nanoribbon (ZGNR) electrodes.


2013 ◽  
Vol 103 (6) ◽  
pp. 063109 ◽  
Author(s):  
Jiadan Lin ◽  
Jianqiang Zhong ◽  
Shu Zhong ◽  
Hai Li ◽  
Hua Zhang ◽  
...  

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