ChemInform Abstract: Electronic Transport Properties of Transition Metal Dichalcogenide Field-Effect Devices: Surface and Interface Effects

ChemInform ◽  
2015 ◽  
Vol 46 (50) ◽  
pp. no-no
Author(s):  
Hennrik Schmidt ◽  
Francesco Giustiniano ◽  
Goki Eda
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electronic Transport ◽  
Field Effect ◽  
Transition Metal Dichalcogenide ◽  
Electronic Transport Properties ◽  
Surface And Interface ◽  
Field Effect Devices ◽  
Interface Effects

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

2015 ◽  
Vol 44 (21) ◽  
pp. 7715-7736 ◽  
Author(s):  
Hennrik Schmidt ◽  
Francesco Giustiniano ◽  
Goki Eda
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electronic Properties ◽  
Electronic Transport ◽  
Field Effect ◽  
State Of The Art ◽  
Transition Metal Dichalcogenide ◽  
Surface And Interface ◽  
Field Effect Devices ◽  
Interface Effects

We review the state-of-the-art electronic properties of atomically thin TMD FETs with a focus on surface and interface effects.

The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions

2016 ◽  
Vol 4 (46) ◽  
pp. 10962-10966 ◽  
Author(s):  
Yipeng An ◽  
Mengjun Zhang ◽  
Dapeng Wu ◽  
Zhaoming Fu ◽  
Kun Wang
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electronic Transport ◽  
Transition Metal Dichalcogenide ◽  
Electronic Transport Properties

All kinds of MoS2–WS2 lateral heterojunctions present an interesting negative differential resistive effect.

Electronic transport properties of MoS2 nanoribbons embedded in butadiene solvent

2019 ◽  
Vol 21 (21) ◽  
pp. 11359-11366 ◽  
Author(s):  
Armando Pezo ◽  
Matheus P. Lima ◽  
Marcio Costa ◽  
Adalberto Fazzio
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electronic Transport ◽  
Transition Metal Dichalcogenides ◽  
Edge States ◽  
Electronic Transport Properties ◽  
Metal Dichalcogenides

Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport.

Electronic transport properties in the liquid 3d transition-metal series

2002 ◽  
Vol 82 (8) ◽  
pp. 875-889
Author(s):  
H. Zrouri ◽  
J. Hugel ◽  
C. Chaib ◽  
J. G. Gasser ◽  
L. Roubi
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Transport Properties

Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

2013 ◽  
Vol 103 (6) ◽  
pp. 063109 ◽  
Author(s):  
Jiadan Lin ◽  
Jianqiang Zhong ◽  
Shu Zhong ◽  
Hai Li ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electronic Transport Properties ◽  
Effect Transistor
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